MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TSM650P02CX RFG


MOSFET -20V -4.1A Single P-Channel Power MOSFET
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Taiwan Semiconductor 15700
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between Thu. 09 Jul to Mon. 13 Jul
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AUD 0.1515

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4.1 A20 V52 mOhmsP - Channel 400 mV + 150 C1.56 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V6.4 nCEnhancement  
IPS70R360P7SAKMA1


Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL
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Infineon 15694
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between Thu. 09 Jul to Mon. 13 Jul
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AUD 0.6082

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            Coolmos P7      
DMN63D8L-13


MOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW
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Diodes Incorporated 15678
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between Thu. 09 Jul to Mon. 13 Jul
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AUD 0.0487

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350 mA30 V2.8 OhmsN - Channel 1.5 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V900 pCEnhancement  
IPD50N04S4-08


MOSFET N-Channel 40V MOSFET
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Infineon 15669
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between Thu. 09 Jul to Mon. 13 Jul
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AUD 0.4546

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50 A40 V7.2 mOhmsN - Channel 2 V- 55 C+ 175 C46 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V22.4 nCEnhancementAec - Q101Optimos
2N7000_D74Z


Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo
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ON Semiconductor 15649
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between Thu. 09 Jul to Mon. 13 Jul
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AUD 0.197

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200 mA60 V1.2 OhmsN - Channel  - 55 C+ 150 C400 mWThrough HoleTO - 92 - 3Ammo PackSi1 Channel20 V Enhancement  
CSD17552Q3A


N-Channel 30 V 15A (Ta), 60A (Tc) 2.6W (Ta) Surface Mount 8-SON (3.3x3.3)
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Texas Instruments 15423
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between Thu. 09 Jul to Mon. 13 Jul
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AUD 0.6681

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48 A30 V8.1 mOhmsN - channel 1.5 V- 55 C+ 150 C2.6 WSmd/smtSON - 8ReelSi1 Channel20 V9 nC  Nexfet
PRZM002P02T2L


SOT-723 MOSFETs ROHS
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TECH PUBLIC 15326
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between Fri. 17 Jul to Wed. 22 Jul
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AUD 0.0345

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BSC096N10LS5ATMA1


100V 40A 9.6mO@20A,10V N Channel TDSON-8-6 MOSFETs ROHS
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Infineon 15130
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between Thu. 09 Jul to Mon. 13 Jul
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AUD 1.1409

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           Cut Tape       
IRLML5203TRPBF


SOT-23 MOSFETs ROHS
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TECH PUBLIC 14632
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between Fri. 17 Jul to Wed. 22 Jul
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AUD 0.0782

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IAUZ40N06S5L050ATMA1


MOSFET MOSFET_)40V 60V)
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Infineon 10651
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between Thu. 09 Jul to Mon. 13 Jul
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AUD 0.7653

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40 A60 V5 mOhmsN - Channel 2.2 V- 55 C+ 175 C71 WSMD/SMT Reel , Cut TapeSi1 Channel- 16 V , + 16 V28 nCEnhancement  
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