MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SUM110P06-07L-E3


P-Channel 60 V 110A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D²Pak)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 15520
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AUD 2.9345
Multiples of: 800

110 A60 V6.9 mOhmsP - Channel 1 V- 55 C+ 175 C375 mWSmd/SmtTO - 263 - 3ReelSi1 Channel- 10 V230 nCEnhancement Trenchfet
IPB180P04P403ATMA1


Trans MOSFET P-CH 40V 180A 7-Pin(6+Tab) TO-263
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Infineon 15520
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AUD 3.001
Multiples of: 1

           Reel       
STH275N8F7-2AG


STMicroelectronics MOSFET
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STMicroelectronics 15520
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AUD 4.6508
Multiples of: 1000

180 A80 V1.7 mOhmsN - Channel 2.5 V- 55 C+ 175 C315 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V193 nCEnhancementAec - Q101Stripfet
SSM3K15AFU,LF(T


Transistor: N-MOSFET; unipolar; 30V; 100mA; 150mW; SC70
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Toshiba 15495
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AUD 0.0756
Multiples of: 5

                   
PSMN4R2-30MLDX


MOSFET 30V N-Channel 2.4mOhm
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Nexperia 15490
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AUD 0.7004
Multiples of: 1

70 A30 V5.7 mOhmsN - Channel2.2 V2.2 V  65 WSmd/SmtLFPAK33 - 4ReelSi1 Channel2.2 V29.3 nCEnhancement  
WNM2030


SOT-723 MOSFETs ROHS
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TECH PUBLIC 15482
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AUD 0.0316
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AO3407A


30V 4.1A 60mΩ@-10V,-4.1A 1.3W 3V@250uA P Channel SOT-23 MOSFETs ROHS
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FUXINSEMI 15481
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AUD 0.0302
Multiples of: 20

                   
IAUC41N06S5L100ATMA1


N-Channel 60V 41A (Tj) 42W (Tc) Surface Mount PG-TDSON-8-33
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Infineon 15478
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AUD 0.5029
Multiples of: 1

          8 - PowertdfnTape And ReelMosfet (Metal Oxide)      
FDB86135


N-Channel 100 V 75A (Tc) 2.4W (Ta), 227W (Tc) Surface Mount D²PAK (TO-263)
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ON Semiconductor 15473
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AUD 5.2556
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75 A100 V3.5 mOhmsN - Channel  - 55 C+ 175 C227 WSmd/SmtD2PAK - 2ReelSi1 Channel20 V   Powertrench
SI7850ADP-T1-GE3


MOSFET 60V Vds 20V Vgs PowerPAK SO-8
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Vishay 15469
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AUD 0.8548
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12 A60 V19.5 mOhmsN - Channel 2.8 V- 55 C+ 150 C35.7 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 V11.1 nC   
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