MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 15423
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AUD 0.0109
Multiples of: 50

                   
2N7002BKV,115


MOSFET Dual N-Channel 60V 340mA
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Nexperia 15423
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AUD 0.1313
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340 mA60 V1.6 OhmsN - Channel 1.1 V- 55 C+ 150 C0.525 WSmd/SmtSOT - 666 - 6ReelSi2 Channel10 V0.5 nCEnhancement  
SI7423DN-T1-E3


MOSFET 30V 11.7A 3.8W 18mohm @ 10V
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Vishay 15421
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AUD 1.0441
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   P - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8ReelSi     Trenchfet
Hot 2N7002H6327XTSA2


Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23
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Infineon 15413
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AUD 0.047
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            Optimos      
IAUC41N06S5L100ATMA1


N-Channel 60V 41A (Tj) 42W (Tc) Surface Mount PG-TDSON-8-33
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Infineon 15400
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AUD 0.4874
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          8 - PowertdfnTape And ReelMosfet (Metal Oxide)      
IPB120N10S405ATMA1


MOSFET N-CHANNEL 100+
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Infineon 15399
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AUD 3.0962
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           Cut Tape       
NX3008PBKS,115


Mosfet Array 2 P-Channel (Dual) 30V 200mA 445mW Surface Mount 6-TSSOP
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Nexperia 15383
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AUD 0.0936
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   P - Channel  - 55 C+ 150 C Smd/SmtSC - 88Reel       
BSS123N H6433


Infineon Technologies MOSFET N-Ch 100V 190mA SOT-23-3
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Infineon 15361
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AUD 0.0681
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190 mA100 V2.4 OhmsN - Channel 800 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3ReelSi1 Channel20 V900 pCEnhancement  
FDB86135


N-Channel 100 V 75A (Tc) 2.4W (Ta), 227W (Tc) Surface Mount D²PAK (TO-263)
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ON Semiconductor 15338
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AUD 4.9254
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75 A100 V3.5 mOhmsN - Channel  - 55 C+ 175 C227 WSmd/SmtD2PAK - 2ReelSi1 Channel20 V   Powertrench
BSP316P H6327


Infineon Technologies MOSFET P-Ch -100V -680mA SOT-223-3
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Infineon 15310
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AUD 0.502
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- 680 mA- 100 V1.8 OhmsP - Channel - 1.5 V- 55 C+ 150 C1.8 WSmd/SmtPG - SOT223 - 4 - 1Reel-1 Channel+/- 20 V- 5.1 nCEnhancement  
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