MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NDT014L


MOSFET N-Ch LL FET Enhancement Mode
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ON Semiconductor 15804
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AUD 0.6973
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2.8 A60 V170 mOhmsN - Channel  - 65 C+ 150 C3 WSmd/SmtSOT - 223ReelSi1 Channel20 V Enhancement  
DMN3900UFA-7B


N-Channel 30 V 550mA (Ta) 390mW (Ta) Surface Mount X2-DFN0806-3
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Diodes Incorporated 15800
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AUD 0.1477
Multiples of: 1

0.65 A30 V760 mOhmsN - Channel8 V0.95 V- 55 C+ 150 C490 mWSmd/SmtX2 - DFN0806 - 3Reel   0.7 nCEnhancement  
BSC120N03MS G


Infineon Technologies MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3M
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Infineon 14661
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AUD 0.2891
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11 A30 V12 mOhmsN - Channel16 V1 V- 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel20 V20 nCEnhancement Optimos
AO4805


SOP-8 MOSFETs ROHS
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TECH PUBLIC 13434
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AUD 0.2184
Multiples of: 5

                   
LBSS138DW1T1G


50V 200mA 1.5V null SC-88 MOSFETs ROHS
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Leshan 12416
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AUD 0.0353
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NTR4503NT1G


SOT-23 MOSFETs ROHS
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Youtai 12144
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AUD 0.0286
Multiples of: 20

                   
FQP13N50C


Fairchild Semiconductor MOSFET 500V N-Ch Q-FET advance C-Series
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ON Semiconductor 1261
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AUD 1.5069
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13 A500 V480 mOhmsn - channel  - 55 C+ 150 C195 Wthrough holeTO - 220 - 3Tubesi1 channel30 V enhancement  
L2N7002KLT1G


MOSFET N Trench 60V 320mA 2.5V @ 250uA 2.3 O @ 500mA,10V SOT-23 (SOT-23-3) RoHS
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Leshan 0
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AUD 0.0143
Multiples of: 50

                   
DMN3065LW-13


N-Channel 30 V 4A (Ta) 770mW (Ta) Surface Mount SOT-323
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Diodes Incorporated 0
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AUD 0.1192
Multiples of: 1

4 A30 V85 mOhmsN - Channel 1.5 V- 55 C+ 150 C770 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel12 V11.7 nCEnhancement Powerdi
IAUCN04S7N030ATMA1


MOSFETs N
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Infineon 0
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AUD 0.5264
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100 A40 V3.02 mOhmsN - Channel 2.6 V- 55 C+ 175 C58 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V16 nCEnhancement  
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