MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTJD4401NT1G


MOSFET 20V Dual N-Channel ESD Protection
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 17217
Ships to you
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AUD 0.1142
Multiples of: 3000

910 mA20 V375 mOhmsn - channel 600 mV- 55 C+ 150 C0.55 Wsmd/smtSC - 88 - 6Cut Tapesi2 channel4.5 V1.3 nCenhancement  
DMN2550UFA-7B


Diodes Incorporated MOSFET 20V N-Ch Enh FET 8 VGS 52.5pF 0.88nC
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Diodes Incorporated 17209
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AUD 0.0874
Multiples of: 1

600 mA20 V450 mOhmsN - Channel 1 V- 55 C+ 150 C360 mWSmd/SmtX2 - DFN0806 - 3ReelSi1 Channel8 V0.88 nCEnhancement  
SI3493BDV-T1-BE3


MOSFET P-CHANNEL 20-V (D-S)
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Vishay 17197
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AUD 0.6731
Multiples of: 1

8 A20 V27.5 mOhmsP - Channel 900 mV- 55 C+ 150 C2.97 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 8 V , + 8 V26.2 nCEnhancement  
DMP3014SFDE-13


MOSFETs MOSFET BVDSS: 25V~30V U-DFN2020-6 T and R 10K
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Diodes Incorporated 17185
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AUD 0.2923
Multiples of: 1

11.4 A30 V13.5 mOhmsP - Channel 2.6 V- 55 C+ 150 C2.2 WSMD/SMTU - DFN2020 - 6Reel , Cut TapeSi1 Channel- 25 V , + 25 V18 nCEnhancement  
YJL2305B


Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -20V; -4.4A; 1.2W
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Yangjie 17110
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AUD 0.0393
Multiples of: 10

            Trench Power Lv      
IRF7815TRPBF


Transistor: N-MOSFET; unipolar; 150V; 5.1A; 2.5W; SO8
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Infineon 16867
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AUD 0.8622
Multiples of: 1

5.1 A150 V34 mOhmsN - Channel 4 V- 55 C+ 150 C2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V25 nC   
L2N7002SWT1G


MOSFET N Trench 60V 320mA 2V @ 250uA 2.8 Ω @ 500mA,10V SC-70 RoHS
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Leshan 15471
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AUD 0.0175
Multiples of: 50

                   
2N7002K 72K


60V 300mA 2.8Ω@10V,500mA 225mW 2.5V@250uA N Channel -55℃~+150℃@(Tj) SOT-23 MOSFETs ROHS
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FOSAN 14065
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AUD 0.0091
Multiples of: 50

                   
AO4407


SOIC-8 MOSFETs ROHS
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GOODWORK 13109
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AUD 0.1032
Multiples of: 5

                   
SVD5867NLT4G


MOSFET NFET DPAK 60V 18A 43MOHM
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ON Semiconductor 0
6 to 16 Weeks Calender.png

AUD 0.3485
Multiples of: 2500

22 A60 V39 mOhmsN - Channel 1.5 V- 55 C+ 175 C43 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V15 nCEnhancementAEC - Q101 
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