MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TQM2N7002KDCU6 RFG


MOSFETs 60V, 0.33A, Dual N-Channel Small-signal MOSFETs
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Taiwan Semiconductor 16654
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AUD 0.0801
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330 mA60 V1.6 OhmsN - Channel 2.5 V- 55 C+ 150 C337 mWSMD/SMTSOT - 363 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V1.7 nCEnhancementAEC - Q101 
BSZ0702LSATMA1


MOSFET TRENCH 40<-<100V
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Infineon 16629
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AUD 0.7213
Multiples of: 1

40 A60 V4.4 mOhmsN - Channel 1.7 V- 55 C+ 150 C69 WSMD/SMTTSDSON - 8Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V18 nCEnhancement  
FDMC86265P


MOSFET PT5 150V/25V Pch PowerTrench Mosfet
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ON Semiconductor 16612
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AUD 0.9979
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- 1.8 A- 150 V1.2 Ohmsp - channel25 V- 3.2 V- 55 C+ 150 C16 Wsmd/smtMLP - 8Reelsi1 channel25 V2.8 nCenhancement powertrench
DMN2550UFA-7B


Diodes Incorporated MOSFET 20V N-Ch Enh FET 8 VGS 52.5pF 0.88nC
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Diodes Incorporated 16610
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AUD 0.0849
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600 mA20 V450 mOhmsN - Channel 1 V- 55 C+ 150 C360 mWSmd/SmtX2 - DFN0806 - 3ReelSi1 Channel8 V0.88 nCEnhancement  
8205A


20V 6A 19mΩ 1.2V N Channel TSSOP-8 MOSFETs ROHS
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HL 16470
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AUD 0.0382
Multiples of: 20

                   
TDM3478


MOSFET N Trench 30V 54A 2.5V @ 250uA 6 mΩ @ 12A,10V DFN 3x3 RoHS
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Techcode 16470
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AUD 0.1917
Multiples of: 5

                   
RQ3E120GNTB


ROHM Semiconductor MOSFET 4.5V Drive Nch MOSFET
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ROHM 16413
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AUD 0.2546
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27 A30 V8.8 mOhmsN - Channel 2.5 V- 55 C+ 150 C2 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V10 nCEnhancement  
JSM2302


20V 6A 26mΩ@4.5V,6A 1.25W 1.2V@250uA 80pF@15V N Channel 300pF@15V +150℃@(Tj) SOT-23 MOSFETs ROHS
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JSMSEMI 16315
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AUD 0.022
Multiples of: 20

                   
AO3416


20V 7.5A 13m@4.5V,7.5A 1.39W 700mV@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 16296
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AUD 0.0373
Multiples of: 1

                   
2N7002-SOT23


MOSFET N Trench 60V 200mA 1V @ 250uA（Min） 7.5 Ω @ 500mA,10V SOT-23 RoHS
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PUOLOP 15859
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AUD 0.0141
Multiples of: 50

                   
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