MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSZ0702LSATMA1


MOSFET TRENCH 40<-<100V
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Infineon 17008
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AUD 0.7372
Multiples of: 1

40 A60 V4.4 mOhmsN - Channel 1.7 V- 55 C+ 150 C69 WSMD/SMTTSDSON - 8Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V18 nCEnhancement  
DMT6015LSS-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 16994
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AUD 0.4714
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         Smd/SmtSO - 8Cut TapeSi      
SI4931DY-T1-E3


Mosfet Array 2 P-Channel (Dual) 12V 6.7A 1.1W Surface Mount 8-SOIC
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Vishay 16993
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AUD 0.921
Multiples of: 1

   p - channel  - 55 C+ 150 C smd/smtSOIC - 8 NarrowReel      trenchfet
DMN67D7L-7


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 16975
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AUD 0.0474
Multiples of: 1

210 mA60 V1.5 OhmsN - Channel 800 mV- 55 C+ 150 C570 mWSmd/SmtSOT - 23 - 3 Si1 Channel10 V821 pCEnhancement  
SI1965DH-T1-BE3


Mosfet Array 2 P-Channel (Dual) 12V 1.14A (Ta), 1.3A (Tc) 740mW (Ta), 1.25W (Tc) Surface Mount SC-70-6
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Vishay 16975
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AUD 0.2519
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1.3 A12 V390 mOhmsP - Channel 2.5 V- 55 C+ 150 C1.25 WSMD/SMTSOT - 363 - 6Reel , Cut TapeSi2 Channel- 8 V , + 8 V4.2 nCEnhancement  
STD16NF06T4


Transistor: N-MOSFET; unipolar; 60V; 11A; 40W; DPAK
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STMicroelectronics 16975
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AUD 0.622
Multiples of: 2500

   N Channel               
NTD6414ANT4G


N-Channel 100 V 32A (Tc) 100W (Tc) Surface Mount DPAK
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ON Semiconductor 16975
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AUD 0.708
Multiples of: 2500

32 A100 V37 mOhmsN - Channel 2 V- 55 C+ 175 C100 WSmd/SmtDPAKReelSi1 Channel10 V40 nCEnhancement  
STS10P3LLH6


STMicroelectronics MOSFET
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STMicroelectronics 16975
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AUD 0.9191
Multiples of: 2500

12.5 A30 V12 mOhmsP - Channel 1 V- 55 C+ 150 C2.7 WSmd/SmtSO - 8ReelSi1 Channel- 10 V33 nCEnhancement Stripfet
STD80N10F7


MOSFET N-Ch 100V 0.0085Ohm typ 70A STripFET VII
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STMicroelectronics 16975
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AUD 1.0168
Multiples of: 2500

70 A100 V10 mOhmsN - Channel20 V4.5 V- 55 C+ 175 C85 WSmd/SmtDPAK - 2ReelSi1 Channel20 V45 nC  Stripfet
SH8K32GZETB


MOSFET 4V DRIVE NCH+NCH
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ROHM 16944
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AUD 1.1785
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4.5 A60 V65 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSmd/SmtSOP - 8Cut TapeSi2 Channel20 V7 nCEnhancement  
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