MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP6110SSD-13


MOSFET 60V Dual P-Ch Enh FET 60Vds 20Vgs
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Diodes Incorporated 16975
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AUD 0.2649
Multiples of: 2500

- 3.3 A , - 3.3 A- 60 v , - 60 V130 mOhms , 130 mOhmsP - Channel - 1 v , - 1 V- 55 C+ 150 C1.7 WSmd/SmtSO - 8Reel-2 Channel+/- 20 v , +/- 20 V17.2 nC , 17.2 nCEnhancement  
NDS9948


Transistor: P-MOSFET x2; unipolar; -60V; -2A; 2W; SO8
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ON Semiconductor 16975
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AUD 0.4365
Multiples of: 2500

            Powertrench®      
IRFL4105TRPBF


Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223
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Infineon 16975
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AUD 0.4661
Multiples of: 2500

3.7 A55 V45 mOhmsN - Channel    2.1 WSmd/SmtSOT - 223ReelSi1 Channel20 V23 nC   
STD16NF06T4


Transistor: N-MOSFET; unipolar; 60V; 11A; 40W; DPAK
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STMicroelectronics 16975
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AUD 0.701
Multiples of: 2500

   N Channel               
NTD6414ANT4G


N-Channel 100 V 32A (Tc) 100W (Tc) Surface Mount DPAK
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ON Semiconductor 16975
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AUD 0.7615
Multiples of: 2500

32 A100 V37 mOhmsN - Channel 2 V- 55 C+ 175 C100 WSmd/SmtDPAKReelSi1 Channel10 V40 nCEnhancement  
STS10P3LLH6


STMicroelectronics MOSFET
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STMicroelectronics 16975
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AUD 0.9191
Multiples of: 2500

12.5 A30 V12 mOhmsP - Channel 1 V- 55 C+ 150 C2.7 WSmd/SmtSO - 8ReelSi1 Channel- 10 V33 nCEnhancement Stripfet
STD80N10F7


MOSFET N-Ch 100V 0.0085Ohm typ 70A STripFET VII
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STMicroelectronics 16975
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AUD 1.2655
Multiples of: 2500

70 A100 V10 mOhmsN - Channel20 V4.5 V- 55 C+ 175 C85 WSmd/SmtDPAK - 2ReelSi1 Channel20 V45 nC  Stripfet
SH8K32GZETB


MOSFET 4V DRIVE NCH+NCH
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ROHM 16944
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AUD 1.1785
Multiples of: 1

4.5 A60 V65 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSmd/SmtSOP - 8Cut TapeSi2 Channel20 V7 nCEnhancement  
IRLML6344TRPBF


SOT-23 MOSFETs ROHS
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TECH PUBLIC 16936
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AUD 0.0366
Multiples of: 20

                   
AP3415E


20V 4A 35mΩ@4.5V,4A 1.25W P Channel SOT-23 MOSFETs ROHS
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Quan Li 16936
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AUD 0.0835
Multiples of: 10

                   
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