MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
F601D-G


SOT-23 MOSFETs ROHS
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CRMICRO 17789
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AUD 0.0687
Multiples of: 10

                   
IPD30N08S2L-21


MOSFET OPTIMOS PWR-TRANS N-CH 75V30A 20.5mOhm
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Infineon 17281
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AUD 1.189
Multiples of: 1

30 A75 V20.5 mOhmsN - Channel 1.2 V- 55 C+ 175 C136 WSmd/SmtTO - 252ReelSi1 Channel10 V56 nCEnhancementAec - Q101Optimos
BSC16DN25NS3G


MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3
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Infineon 17251
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AUD 1.6721
Multiples of: 1

10.9 A250 V165 mOhmsN - Channel 2 V- 55 C+ 150 C62.5 WSmd/SmtPG - TDSON - 8ReelSi1 Channel10 V8.6 nCEnhancement Optimos
TQM2N7002CU RFG


MOSFETs 60V, 0.31A, Single N-Channel Small-signal MOSFETs
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Taiwan Semiconductor 17237
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AUD 0.0597
Multiples of: 1

310 mA60 V3 OhmsN - Channel 2.5 V- 55 C+ 150 C568 mWSMD/SMTSOT - 323Reel , Cut TapeSi1 Channel+ 20 V1.7 nCEnhancementAEC - Q101 
2N7002M3T5G


60V 350mA 1.5O@4.5V,200mA 150mW N Channel SOT-723 MOSFETs ROHS
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TECH PUBLIC 17207
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AUD 0.0304
Multiples of: 20

                   
SI2307CDS-T1-GE3


P-Channel 30 V 3.5A (Tc) 1.1W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)
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Vishay 15995
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AUD 0.138
Multiples of: 5

3.5 A30 V88 mOhmsP - Channel 1 V- 55 C+ 150 C1.8 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V4.1 nCEnhancement Trenchfet
AOD403


MOSFET P Trench 30V 15A 3.5V @ 250uA 6 mΩ @ 20A,20V TO-252-2 (DPAK) RoHS
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Alpha & Omega 15942
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AUD 0.3221
Multiples of: 1

                   
ESD5304D


DFN-10(2.5x1) MOSFETs ROHS
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TECH PUBLIC 11125
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AUD 0.0508
Multiples of: 10

                   
DMG1029SV-7


MOSFET 60V Comp Pair ENH 1.7 Ohm 10V 500mA
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Diodes Incorporated 8075
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AUD 0.1102
Multiples of: 5

500 mA , 360 mA60 V1.7 Ohms , 4 OhmsN - Channel, P - Channel 1 V- 55 C+ 150 C450 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel10 V0.3 nC , 0.28 nCEnhancement  
IRF7805ZTRPBF


MOSFET N Trench 30V 16A 2.25V @ 250uA 6.8 mΩ @ 16A,10V SOIC-8_150mil RoHS
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Infineon 1763
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AUD 0.7207
Multiples of: 1

16 A30 V8.7 mOhmsN - Channel    2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V18 nC   
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