MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTZD3154NT1G


SOT563 MOSFETs ROHS
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TECH PUBLIC 17136
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AUD 0.1223
Multiples of: 5

                   
IRLR2905


TO-252-2 MOSFETs ROHS
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TECH PUBLIC 17135
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AUD 0.2462
Multiples of: 5

                   
SL3401S


MOSFET P Trench 30V 4A 1.3V @ 250uA 60 mΩ @ 4A,10V SOT-23 RoHS
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SLKORMICRO 17098
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AUD 0.037
Multiples of: 10

                   
FDN335N


20V 1.7A 70mΩ@1.7A,4.5V 1W 1.5V@250uA null SOT-23 MOSFETs ROHS
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Youtai 17091
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AUD 0.0201
Multiples of: 20

                   
SI2302S


MOSFET N Trench 20V 3A 1V @ 250uA 80 mΩ @ 1A,2.5V SOT-23 RoHS
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Bourne 17074
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AUD 0.0235
Multiples of: 20

                   
IRFS52N15DTRRP


N-Channel 150 V 51A (Tc) 3.8W (Ta), 230W (Tc) Surface Mount D2PAK
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Infineon 17072
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AUD 2.0243
Multiples of: 1

            hexfet®      
SSM6J212FE,LF


Toshiba MOSFET P-Ch U-MOS VI FET ID -4A -20VDSS 500mW
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Toshiba 17061
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AUD 0.2337
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- 4 A- 20 V94 mOhmsP - Channel - 0.3 v to - 1 V- 55 C+ 150 C500 mWSmd/SmtSOT - 23 - 6ReelSi1 Channel8 V14.1 nC   
IRF7324TR(UMW)


SOP-8 MOSFETs ROHS
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Youtai 17020
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AUD 0.2612
Multiples of: 5

                   
DMG1012T-13


MOSFET 20V N-Ch Enhance Mode MOSFET
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Diodes Incorporated 16938
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AUD 0.064
Multiples of: 1

630 mA20 V400 mOhmsN - Channel 500 mV- 55 C+ 150 C0.28 WSmd/SmtSOT - 523 - 3Cut TapeSi1 Channel6 V736.6 nCEnhancement  
EM6J1T2R


ROHM Semiconductor MOSFET FET Dual Pch -20V -200mA EMT6
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ROHM 1511
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AUD 0.2019
Multiples of: 1

- 200 mA- 20 V1.2 OhmsP - Channel    150 mWSmd/SmtEMT - 6ReelSi2 Channel 1.4 nC   
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