MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STP3NK80Z


MOSFET N-Ch 800 Volt 2.5A Zener SuperMESH
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STMicroelectronics 16490
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AUD 0.7912
Multiples of: 1000

2.5 A800 V4.5 OhmsN - Channel 3 V- 55 C+ 150 C70 WThrough HoleTO - 220 - 3 Si1 Channel10 V19 nCEnhancement Supermesh
STB40NF20


STMicroelectronics MOSFET Low charge STripFET
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STMicroelectronics 16490
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AUD 2.3232
Multiples of: 1000

40 A200 V45 mOhmsn - channel20 V - 55 C+ 150 C160 Wsmd/smtD2PAK - 3Reelsi1 channel20 V enhancement stripfet
STH240N10F7-6


STMicroelectronics MOSFET
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STMicroelectronics 16490
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AUD 2.385
Multiples of: 1000

180 A100 V2.5 mOhmsN - Channel 2.5 V- 55 C+ 175 C300 WSmd/SmtH2PAK - 6ReelSi1 Channel20 V160 nCEnhancement Stripfet
CSD25402Q3A


mosfet p trench 20v 76a 1.15v @ 250ua 8.9 m @ 10a,4.5v vsonp-8 rohs
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Texas Instruments 16486
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AUD 0.539
Multiples of: 1

                   
SI2366DS-T1-BE3


MOSFET N-CHANNEL 30-V (D-S)
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Vishay 16480
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AUD 0.2788
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5.8 A30 V36 mOhmsN - Channel 2.5 V- 55 C+ 150 C2.1 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 20 V , 20 V3.2 nCEnhancement  
NX3008PBKVL


MOSFET NX3008PBKSOT23TO-236AB
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Nexperia 16475
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AUD 0.0424
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230 mA30 V7.8 OhmsP - Channel 600 mV- 55 C+ 150 C420 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel8 V0.55 nCEnhancementAec - Q101 
TQM84KCU RFG


MOSFETs -60V, -0.16A, Single P-Channel Small-signal MOSFETs
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Taiwan Semiconductor 16432
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AUD 0.0597
Multiples of: 1

160 mA60 V7 OhmsP - Channel 2.5 V- 55 C+ 150 C300 mWSMD/SMTSOT - 323 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V1.9 nCEnhancementAEC - Q101 
2N7002KW


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-323 MOSFETs ROHS
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ElecSuper 16412
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AUD 0.0179
Multiples of: 20

                   
WNM3013-3/TR


50V 250mA 1.2mΩ@10V,450mA 380mW N Channel SOT-723 MOSFETs ROHS
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Will Semiconductor 16266
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AUD 0.055
Multiples of: 10

                   
ZXMN6A11GTA


MOSFET 60V N-Chnl UMOS
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Diodes Incorporated 15520
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AUD 0.5964
Multiples of: 1000

4.4 A60 V120 mOhmsN - Channel 1 V- 55 C+ 150 C3.9 WSmd/SmtSOT - 223ReelSi1 Channel10 V5.7 nCEnhancement  
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