MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO6604


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 16834
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AUD 0.1101
Multiples of: 5

                   
IRLML6402


SOT-23 MOSFETs ROHS
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Bourne 16829
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AUD 0.0476
Multiples of: 10

                   
NX7002BKXBZ


NXP Semiconductors MOSFET 60V dual N-channel Trench MOSFET
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Nexperia 16820
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AUD 0.1117
Multiples of: 1

260 mA , 260 mA60 v , 60 V5.7 Ohms , 5.7 OhmsN - Channel 1.1 V- 55 C+ 150 C407 mWSmd/SmtDFN1010B - 6ReelSi2 Channel20 v , 20 V1 nC , 1 nCEnhancement  
FDN337N


SOT-23 MOSFETs ROHS
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FUXINSEMI 16819
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AUD 0.0486
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PJM2300NSA


MOSFET N Trench 20V 4.5A 1V @ 250uA 32 mΩ @ 3A,4.5V SOT-23 RoHS
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Pingjingsemi 16783
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AUD 0.027
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BSS138-TP


MOSFET N-Ch Enh FET 50Vds 0.22A 20Vgs 0.35W
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Micro Commercial Components (MCC) 16771
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AUD 0.0437
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0.22 A50 V3.5 OhmsN - Channel 0.8 V- 55 C+ 150 C0.35 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
2319


40V 4A 63mΩ 2.5V P Channel SOT-23 MOSFETs ROHS
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HL 16761
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AUD 0.0324
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SSM3K56ACT,L3F


MOSFET Small-signal MOSFET ID: 1.4A, VDSS: 20V
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Toshiba 16751
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AUD 0.0435
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1.4 A20 V840 mOhmsN - Channel 400 mV- 55 C+ 150 C500 mWSmd/SmtCST - 3ReelSi1 Channel+/- 8 V1 nCEnhancement  
2N7002K


MOSFET N Trench 60V 300mA 2.5V @ 250uA 3 Ω @ 500mA,10V SOT-23 (SOT-23-3) RoHS
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Good-Ark 16749
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AUD 0.0345
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IRFR024NTRPBF


MOSFET N Trench 55V 17A 4V @ 250uA 75 mΩ @ 10A,10V TO-252-2 (DPAK) RoHS
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Infineon 16669
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AUD 0.2036
Multiples of: 5

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