MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO4406AL


30V 13A 11.5m@10V,12A 3.1W 1.5V@250uA 1PCSNChannel SOP-8 MOSFETs ROHS
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ElecSuper 17062
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AUD 0.1284
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SSM6J212FE,LF


Toshiba MOSFET P-Ch U-MOS VI FET ID -4A -20VDSS 500mW
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Toshiba 17061
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AUD 0.2337
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4 A20 V94 mOhmsP - Channel 1 V- 55 C+ 150 C500 mWSMD/SMTES6 - 6Reel , Cut TapeSi1 Channel- 8 V , 8 V14.1 nCEnhancement U - MOSVI
SP000929186


MOSFET P-Ch -60V -170mA SOT-23-3
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Infineon 17043
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AUD 0.0631
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170 mA60 V5.8 OhmsP - Channel 2 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V1.5 nCEnhancement  
SI1965DH-T1-BE3


Mosfet Array 2 P-Channel (Dual) 12V 1.14A (Ta), 1.3A (Tc) 740mW (Ta), 1.25W (Tc) Surface Mount SC-70-6
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Vishay 16975
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AUD 0.2519
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1.3 A12 V390 mOhmsP - Channel 2.5 V- 55 C+ 150 C1.25 WSMD/SMTSOT - 363 - 6Reel , Cut TapeSi2 Channel- 8 V , 8 V4.2 nCEnhancement  
DMN2004DWK-7


MOSFET Dual N-Channel
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Diodes Incorporated 16965
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AUD 0.1174
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   N - Channel  - 65 C+ 150 C Smd/SmtSOT - 363 - 6Reel       
ZXMN3F30FHTA


SOT-23 MOSFETs ROHS
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TECH PUBLIC 16878
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AUD 0.0717
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BSZ0702LSATMA1


MOSFET TRENCH 40<-<100V
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Infineon 16629
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AUD 0.7323
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40 A60 V4.4 mOhmsN - Channel 1.7 V- 55 C+ 150 C69 WSMD/SMTTSDSON - 8Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V18 nCEnhancement  
FDN304P


Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SOT23
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ON Semiconductor 14967
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AUD 0.2357
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            Powertrench®      
IRFI4321PBF


Transistor: N-MOSFET; unipolar; 150V; 34A; 46W; TO220FP
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Infineon 14014
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AUD 2.2868
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34 A150 V12.2 mOhmsN - Channel    46 WThrough HoleTO - 220 - 3 FPTubeSi 30 V73 nC   
FDS6692A


MOSFET 30V 9A 11.5 OHM NCH POWER TR
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ON Semiconductor 0
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AUD 0.7988
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9 A30 V8.2 mOhmsn - channel  - 55 C+ 150 C1.47 Wsmd/smtSO - 8Cut Tapesi1 channel20 V enhancement powertrench
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