MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002E-T1-GE3


MOSFET 60V 240mA 0.35W 3.0ohm @ 10V
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Vishay 1930
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AUD 0.1627
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240 mA60 V3 OhmsN - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel4.5 V0.6 nCEnhancement  
JSM4N60D


TO-252 MOSFETs ROHS
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JSMSEMI 1930
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AUD 0.248
Multiples of: 5

                   
5N50G-TF1-T


TO-220F1 MOSFETs ROHS
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Unisonic 1930
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AUD 0.3083
Multiples of: 5

                   
STD4LN80K5


MOSFET N-channel 800 V 2.1 Ohm typ. 3 A MDmesh K5 Power MOSFET in a DPAK package
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STMicroelectronics 1930
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AUD 0.876
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3 A800 V2.1 OhmsN - Channel 3 V- 55 C+ 150 C60 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel30 V3.7 nCEnhancement Mdmesh
IRF520SPBF


MOSFET N-Channel 100V
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Vishay 1930
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AUD 0.9291
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9.2 A100 V270 mOhmsN - Channel  - 55 C+ 175 C3.7 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V Enhancement  
PJMF099N60EC_T0_00601


MOSFETs 600V/ 99mOhms / 39A/ Easy to driver SJ MOSFET
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Panjit 1930
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AUD 2.5119
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39 A600 V99 mOhmsN - Channel 4 V- 55 C+ 150 C34 WThrough HoleITO - 220AB - F - 3TubeSi1 Channel- 30 V , + 30 V60 nCEnhancement  
RBE015N10R1SZQ4#GB0


MOSFETs Nch Power MOSFET 100V 300A 1.5mohm TOLL
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Renesas 1930
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AUD 3.3493
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340 A100 V1.5 mOhmsN - Channel     SMD/SMTTOLL - 8Reel , Cut Tape 1 Channel 170 nC  SmartBond
R6530ENXC7G


MOSFET 650V POWER MOSFET
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ROHM 1930
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AUD 6
Multiples of: 1

30 A650 V140 mOhmsN - Channel 4 V- 55 C+ 150 C86 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , + 20 V , - 30 V , + 30 V90 nCEnhancement  
SIA421DJ-T1-GE3


MOSFET 30V 12A 19W 35mohm @ 10V
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Vishay 1929
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AUD 0.3628
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   P - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SC - 70 - 6LReel       
UTT25P10L-TN3-R


MOSFET P Trench 100V 25A 3V @ 250uA 150 mΩ @ 25A,10V TO-252-2 (DPAK) RoHS
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Unisonic 1455
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AUD 0.3593
Multiples of: 5

                   
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