MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PJA3441_R1_00501


Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
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Panjit 1935
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AUD 0.1435
Multiples of: 5

                   
PJA3433_R1_00001


MOSFET /A33/TR/7"/HF/3K/SOT-23/MOS/SOT/NFET-30TMP/NF30T-QI15/PJ///
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Panjit 1933
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AUD 0.1316
Multiples of: 1

1.1 A30 V370 mOhmsP - Channel 1.3 V- 55 C+ 150 C1.25 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 8 V , + 8 V1.6 nCEnhancement  
PJMP360N60EC_T0_00001


MOSFET 600V/ 360mohm Super Junction Easy version Gen.1.5
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Panjit 1933
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AUD 2.8269
Multiples of: 1

11 A600 V360 OhmsN - Channel 4 V- 55 C+ 150 C87.5 WThrough Hole Reel , Cut TapeSi1 Channel- 30 V , + 30 V18.7 nCEnhancement  
STB6N65K3


MOSFET POWER MOSFET
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STMicroelectronics 1932
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AUD 0.9391
Multiples of: 1

         Smd/SmtTO - 263 - 3 Si      
AG196FPD3HRBTL


MOSFETs MOSFETs, Nch 100V 57A, TO-252 (DPAK), Power MOSFET for Automotive
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ROHM 1932
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AUD 1.0869
Multiples of: 1

57 A100 V16.8 mOhmsN - Channel 4 V- 55 C+ 175 C76 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel20 V17.3 nCEnhancementAEC - Q101 
R6504KNXC7G


MOSFET 650V POWER MOSFET
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ROHM 1932
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AUD 2.0577
Multiples of: 1

4 A650 V1.05 OhmsN - Channel 5 V- 55 C+ 150 C40 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , + 20 V , - 30 V , + 30 V10 nCEnhancement  
R8005ANJGTL


MOSFET MOSFET
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ROHM 1932
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AUD 3.6923
Multiples of: 1

5 A800 V2.1 OhmsN - Channel 5 V- 55 C+ 150 C120 WSMD/SMTTO - 263 - 3Reel , Cut TapeSi1 Channel- 30 V , 30 V20 nCEnhancement  
R6520KNXC7G


MOSFET 650V POWER MOSFET
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ROHM 1931
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AUD 4.4231
Multiples of: 1

20 A650 V205 mOhmsN - Channel 5 V- 55 C+ 150 C68 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , 20 V40 nCEnhancement  
LWN1H5290A4


TO-252 MOSFETs ROHS
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Lewa Micro 1930
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AUD 0.1271
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AONR21357


30V 50A 37W 13mΩ@10V 2.5V@250uA P Channel DFN-8L(3x3) MOSFETs ROHS
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HXY MOS 1907
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AUD 0.3071
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