MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STF7N95K3


STMicroelectronics MOSFET N-CHANNEL 950 V 1.1 7.2 A TO-220
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STMicroelectronics 1940
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AUD 2.1069
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7.2 A950 V1.35 Ohmsn - channel  - 55 C+ 150 C35 Wthrough holeTO - 220 - 3Tubesi1 channel30 V34 nCenhancement supermesh
PJMF580N60E1_T0_00201


MOSFET 600V/ 580mohm Super Junction Easy versio
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Panjit 1938
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AUD 1.2808
Multiples of: 1

8 A600 V580 mOhmsN - Channel 4 V- 55 C+ 150 C28 WThrough Hole Reel , Cut TapeSi1 Channel- 30 V , + 30 V15 nCEnhancement  
PJMF280N60E1_T0_00201


MOSFET 600V/ 280mohm Super Junction Easy versio
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Panjit 1938
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AUD 1.9423
Multiples of: 1

13.8 A600 V280 mOhmsN - Channel 4 V- 55 C+ 150 C34 WThrough Hole Reel , Cut TapeSi1 Channel- 30 V , + 30 V27 nCEnhancement  
SQUN702E-T1_GE3


MOSFET Automotive 40 V N- and P-Channel Common Drain MOSFET Pair and 200 V N-Channel MOSFET
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Vishay 1938
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AUD 3.4306
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20 A , 30 A40 v , 200 V9.2 mOhms , 60 mOhms , 30 mOhmsN - Channel, P - Channel 1.5 v , 2.5 V- 55 C+ 175 C48 w , 60 WSmd/SmtDIECut Tape 3 Channel20 V14 nC , 23 nC , 30.2 nCEnhancement Trenchfet
SI3430DV-T1-E3


MOSFET 100V 8A 2W
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Vishay 1937
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AUD 0.7388
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   N - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6Reel       
TK3P50D,RQ(S


Toshiba MOSFET N-Ch MOS 3A 500V 60W 280pF 3 Ohm
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Toshiba 1937
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AUD 0.7996
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3 A500 V3 OhmsN - Channel    60 WSmd/SmtTO - 252 - 3ReelSi1 Channel     
TK155U60Z1,RQ


MOSFETs N-ch MOSFET, 600 V, 0.155 ohma.10V, TOLL, DTMOS?
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Toshiba 1937
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AUD 2.7746
Multiples of: 1

17 A600 V155 mOhmsN - Channel 4 V + 150 C130 WSMD/SMTTOLL - 9Reel , Cut TapeSi1 Channel30 V24 nCEnhancement  
R6511KNXC7G


MOSFET 650V POWER MOSFET
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ROHM 1937
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AUD 2.9615
Multiples of: 1

11 A650 V400 mOhmsN - Channel 5 V- 55 C+ 150 C53 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , + 20 V , - 30 V , + 30 V22 nCEnhancement  
TK099U60Z1,RQ


MOSFETs N-ch MOSFET, 600 V, 0.099 ohma.10V, TOLL, DTMOS?
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Toshiba 1937
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AUD 3.7104
Multiples of: 1

25 A600 V99 mOhmsN - Channel 4 V + 150 C176 WSMD/SMTTOLL - 9Reel , Cut TapeSi1 Channel30 V36 nCEnhancement  
PJMP099N60EC_T0_00601


MOSFETs 600V/ 99mOhms / 39A/ Easy to driver SJ MOSFET
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Panjit 1937
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AUD 7.109
Multiples of: 1

39 A600 V99 mOhmsN - Channel 4 V- 55 C+ 150 C308 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 30 V , + 30 V60 nCEnhancement  
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