MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TK115U65Z5,RQ


MOSFETs N-ch MOSFET, 650 V, 0.115 ohma.10V, TOLL, DTMOS?
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba 1940
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AUD 5.8448
Multiples of: 1

24 A650 V115 mOhmsN - Channel 4.5 V + 150 C190 WSMD/SMTTOLL - 9Reel , Cut TapeSi1 Channel30 V42 nCEnhancement  
STB45N60DM2AG


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 1940
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AUD 5.8974
Multiples of: 1000

34 A650 V93 mOhmsN - Channel 4 V- 55 C+ 150 C250 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 25 V56 nCEnhancementAec - Q101Mdmesh
R6530KNXC7G


MOSFET 650V POWER MOSFET
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ROHM 1940
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AUD 6
Multiples of: 1

30 A650 V140 mOhmsN - Channel 5 V- 55 C+ 150 C86 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , + 20 V , - 30 V , + 30 V56 nCEnhancement  
STB45N40DM2AG


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 1940
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AUD 6.2668
Multiples of: 1000

38 A400 V72 mOhmsN - Channel 4 V- 55 C+ 150 C250 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 30 V56 nCEnhancementAec - Q101Mdmesh
TK095U65Z5,RQ


MOSFETs N-ch MOSFET, 650 V, 0.095 ohma.10V, TOLL, DTMOS?
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Toshiba 1940
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AUD 6.8955
Multiples of: 1

29 A650 V95 mOhmsN - Channel 4.5 V + 150 C230 WSMD/SMTTOLL - 9Reel , Cut TapeSi1 Channel30 V50 nCEnhancement  
STB34NM60N


Trans MOSFET N-CH 600V 29A 3-Pin(2+Tab) D2PAK T/R
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STMicroelectronics 1940
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AUD 3.667
Multiples of: 1000

                   
DMN3029LFG-7


MOSFET N-Ch Enh Mode Fet 30V 25Vgss 1.0W
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Diodes Incorporated 1939
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AUD 0.2299
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   N - Channel       Reel 1 Channel     
TK50P03M1(T6RSS-Q)


Toshiba MOSFET N-ch 30V 50A DP
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Toshiba 1939
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AUD 0.5865
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50 A30 V9.8 mOhmsN - Channel     Smd/SmtTO - 252 - 3ReelSi1 Channel     
TK100E10N1,S1X(S


Transistor: N-MOSFET; unipolar; 100V; 100A; 255W; TO220AB
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Toshiba 1939
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AUD 1.5851
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SH8M41TB1


MOSFET Nch+Pch 80V/-80V 3.4A/-2.6A; MOSFET
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ROHM 1938
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AUD 0.6387
Multiples of: 1

3.4 A80 V120 mOhmsN And P - Channel   + 150 C2 WSmd/SmtSOP - 8ReelSi2 Channel     
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