MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SPB21N50C3ATMA1


MOSFET HIGH POWER_LEGACY
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Infineon 1940
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AUD 2.9114
Multiples of: 1000

   N Channel      TO - 263 - 3Reel       
2SJ277-DL-E


2SJ277-DL-E
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ON Semiconductor 1940
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AUD 2.9151
Multiples of: 1

                   
Hot TK190U65Z,RQ


MOSFET PWR MOS PD=130W F=1MHZ
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Toshiba 1940
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AUD 3.1194
Multiples of: 1

15 A650 V149 mOhmsN - Channel 4 V- 55 C+ 150 C130 WSMD/SMT2 - 10AF1A - 9Cut Tape , ReelSi1 Channel- 30 V , + 30 V25 nCEnhancement  
FQPF9N90CT


MOSFET 900V N-Chan Advance Q-FET C-Series
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ON Semiconductor 1940
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AUD 3.3955
Multiples of: 50

8 A900 V1.4 OhmsN - Channel  - 55 C+ 150 C68 WThrough HoleTO - 220FTubeSi1 Channel30 V Enhancement  
STP190N55LF3


STMicroelectronics MOSFET N-Ch, 55V-2.9ohms 120A
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STMicroelectronics 1940
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AUD 3.8153
Multiples of: 50

120 A55 V3.7 mOhmsn - channel18 V - 55 C+ 175 C312 Wthrough holeTO - 220 - 3Tubesi1 channel18 V enhancementaec - q101stripfet
TSM020NM10TL RAG


MOSFETs 100V, 300A, Single, N-Channel Low Voltage MOSFETs
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Taiwan Semiconductor 1940
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AUD 4.4164
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300 A100 V2.2 mOhmsN - Channel 3.8 V- 55 C+ 175 C429 WSMD/SMTTOLL - A - 8Reel , Cut TapeSi1 Channel20 V163 nCEnhancement  
PJMF105N60FRC_T0_00601


MOSFETs 600V/ 105mOhms / 35A/ SJ MOSFET with Fast Recovery Qrr/trr / Ruggednss
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Panjit 1940
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AUD 4.5313
Multiples of: 1

35 A600 V105 mOhmsN - Channel 5.8 V- 55 C+ 150 C34 WThrough HoleITO - 220AB - 3TubeSi1 Channel- 30 V , + 30 V60 nCEnhancement  
PJMP105N60FRC_T0_00601


MOSFETs 600V/ 105mOhms / 35A/ SJ MOSFET with Fast Recovery Qrr/trr / Ruggednss
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Panjit 1940
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AUD 4.5313
Multiples of: 1

35 A600 V105 mOhmsN - Channel 5.8 V- 55 C+ 150 C329 WThrough HoleTO - 220AB - L - 3TubeSi1 Channel- 30 V , + 30 V60 nCEnhancement  
FDBL0110N60


Fairchild Semiconductor MOSFET
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ON Semiconductor 1940
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AUD 5.3582
Multiples of: 2000

300 A60 V2.2 mOhmsn - channel 2 V- 55 C+ 175 C429 Wsmd/smtMO - 299A - 8Reelsi1 channel20 V170 nCenhancement powertrench
IPB117N20NFDATMA1


Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO263-3
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Infineon 1940
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AUD 5.5504
Multiples of: 1

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