MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIHF12N60E-E3


MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 1940
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AUD 2.1179
Multiples of: 1

12 A600 V380 mOhmsN - Channel 4 V- 55 C+ 150 C33 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel30 V29 nCEnhancement  
IRFB3207ZPBF


Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB
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Infineon 1940
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AUD 2.1192
Multiples of: 1000

170 A75 V3.3 mOhmsN - Channel    300 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V120 nC   
IPP65R190C7FKSA1


Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO220-3
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Infineon 1940
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AUD 2.1834
Multiples of: 1

            Coolmos      
STP7N95K3


Transistor: N-MOSFET; unipolar; 950V; 4.5A; 150W; TO220-3
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STMicroelectronics 1940
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AUD 1.9368
Multiples of: 1000

            Supermesh      
STP10NM60N


MOSFET N-channel 600 V Mdmesh 8A
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STMicroelectronics 1940
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AUD 2.2347
Multiples of: 1000

   N - Channel  - 55 C+ 150 C Through HoleTO - 220Tube       
STB120NF10T4


Transistor: N-MOSFET; unipolar; 100V; 77A; 312W; D2PAK
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STMicroelectronics 1940
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AUD 2.2761
Multiples of: 1000

            Supermesh      
R6507ENXC7G


MOSFET 650V POWER MOSFET
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ROHM 1940
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AUD 2.3846
Multiples of: 1

7 A650 V665 mOhmsN - Channel 4 V- 55 C+ 150 C46 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , + 20 V , - 30 V , + 30 V20 nCEnhancement  
PJMF190N60E1_T0_00201


MOSFET 600V/ 190mohm Super Junction Easy versio
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Panjit 1940
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AUD 2.6731
Multiples of: 1

20 A600 V190 mOhmsN - Channel 4 V- 55 C+ 150 C38 WThrough Hole Reel , Cut TapeSi1 Channel- 30 V , + 30 V40 nCEnhancement  
PJMP390N65EC_T0_00001


MOSFET 650V/ 390mohm Super Junction Easy version Gen.1.5
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Panjit 1940
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AUD 2.8269
Multiples of: 1

10 A650 V390 OhmsN - Channel 4 V- 55 C+ 150 C87.5 WThrough Hole Reel , Cut TapeSi1 Channel- 30 V , + 30 V19 nCEnhancement  
VNB20N07TR-E


MOSFET N-Ch 70V 20A OmniFET
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STMicroelectronics 1940
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AUD 2.9104
Multiples of: 1000

   N - Channel     Smd/SmtD2PAK - 3Reel       
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