MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ZVN4424ASTZ


Diodes Incorporated MOSFET N-Chnl 240V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 1940
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AUD 0.8323
Multiples of: 2000

260 mA240 V6 OhmsN - channel40 V - 55 C+ 150 C750 mWThrough_HoleTO - 92 - 3BulkSi1 Channel40 V Enhancement  
STP17NF25


Transistor: N-MOSFET; unipolar; 250V; 10A; 90W; TO220-3
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STMicroelectronics 1940
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AUD 0.8938
Multiples of: 1

                   
LND150N3-G-P014


Microchip Technology MOSFET DepletionMode MOSFET
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Microchip 1940
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AUD 0.9125
Multiples of: 1

30 mA500 V1000 OhmsN - Channel  - 55 C+ 150 C740 mWThrough HoleTO - 92 - 3Bulk 1 Channel20 V Depletion  
TN0106N3-G


Transistor: N-MOSFET; unipolar; 60V; 2A; 1W; TO92
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Microchip 1940
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AUD 1.4422
Multiples of: 1

350 mA60 V3 OhmsN - Channel 600 mV- 55 C+ 150 C1 WThrough HoleTO - 92BulkSi1 Channel10 V Enhancement  
FDPF3860T


N-Channel 100 V 20A (Tc) 33.8W (Tc) Through Hole TO-220F-3
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ON Semiconductor 1940
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AUD 1.0468
Multiples of: 1

   N - Channel  - 55 C+ 150 C Through HoleTO - 220FTube       
STB100N6F7


STMicroelectronics MOSFET
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STMicroelectronics 1940
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AUD 1.2237
Multiples of: 1000

100 A60 V5.6 mOhmsn - channel 2 V- 55 C+ 175 C125 Wsmd/smtTO - 263 - 3Tape And Reelsi1 channel20 V30 nCenhancement stripfet
DN1509N8-G


Transistor: N-MOSFET; unipolar; 90V; 0.3A; 1.6W; SOT89-3
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Microchip 1940
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AUD 1.3097
Multiples of: 1

                   
STB130N6F7


MOSFET N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in D2PAK package
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STMicroelectronics 1940
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AUD 1.336
Multiples of: 1000

80 A60 V5 mOhmsn - channel 2 V- 55 C+ 175 C160 Wsmd/smtTO - 263 - 3Tape And Reelsi1 channel20 V42 nCenhancement stripfet
DMT32M5LFG-7


MOSFET MOSFET BVDSS: 25V-30V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 0
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AUD 0.793
Multiples of: 1

           Cut Tape       
SQD40N06-14L_GE3


MOSFET 55V 40A 75W AEC-Q101 Qualified
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Vishay 0
6 to 16 Weeks Calender.png

AUD 1.2062
Multiples of: 2000

40 A60 V11 mOhmsN - Channel 2.5 V- 55 C+ 175 C75 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V34 nCEnhancementAec - Q101Trenchfet
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