MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP2023UFDF-7


MOSFET 20V P-Ch Enh FET 8Vgss -7.6A ID 0.7W
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Diodes Incorporated 1940
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AUD 0.3089
Multiples of: 1

7.6 A20 V27 mOhmsP - Channel 1 V- 55 C+ 150 C730 mWSmd/SmtU - DFN2020 - F - 6Cut TapeSi1 Channel8 V27 nCEnhancement  
TPM40NP8S8


SOP-8 MOSFETs ROHS
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TECH PUBLIC 1940
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AUD 0.3458
Multiples of: 1

                   
ISP25DP06LMXTSA1


MOSFET SMALL SIGNAL MOSFETS
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Infineon 1940
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AUD 0.3996
Multiples of: 1

1.9 A60 V250 mOhmsP - Channel - 1 V- 55 C+ 150 C5 WSmd/SmtSOT - 223 - 4Cut TapeSi1 Channel20 V- 13.9 nCEnhancement  
ZXMN10A07ZTA


N-Channel 100 V 1A (Ta) 1.5W (Ta) Surface Mount SOT-89-3
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Diodes Incorporated 1940
Ships to you
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AUD 0.4098
Multiples of: 1000

1.4 A100 V900 mOhmsN - Channel 2 V- 55 C+ 150 C2.6 WSmd/SmtSOT - 89 - 3Cut TapeSi1 Channel20 V2.9 nCEnhancement  
BS107PSTZ


MOSFET N-Chnl 200V
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Diodes Incorporated 1940
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AUD 0.4976
Multiples of: 2000

120 mA200 V15 OhmsN - Channel  - 55 C+ 150 C500 mW (1/2 w)Through HoleTO - 92 - 3BulkSi1 Channel20 V Enhancement  
ZXMN10A08GTA


MOSFET 100V N-Channel 2A MOSFET
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Diodes Incorporated 1940
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AUD 0.5037
Multiples of: 1000

2.9 A100 V250 mOhmsN - Channel 2 V- 55 C+ 150 C2 WSmd/SmtSOT - 223ReelSi1 Channel10 V7.7 nCEnhancement  
SUD20N10-66L-GE3


MOSFET N-Channel 100-V D-S
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Vishay 1940
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AUD 0.5146
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   N - Channel     Smd/SmtTO - 252 - 3ReelSi1 Channel    Trenchfet
SP30P03TH


TO-252 MOSFETs ROHS
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Siliup 1930
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AUD 0.321
Multiples of: 5

                   
CJQ60P05


60V 5A 58mΩ@10V,5A 3.5V@250uA 110pF@20V P Channel 1450pF@20V 26nC@10V +150℃@(Tj) SOP-8 MOSFETs ROHS
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Changjing Electronics Technology 1644
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AUD 0.2684
Multiples of: 5

                   
BSP315P H6327


Infineon Technologies MOSFET P-Ch -60V -1.17A SOT-223-3
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Infineon 80
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AUD 0.3612
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- 1.17 A- 60 V800 mOhmsP - Channel - 1.5 V- 55 C+ 150 C1.8 WSmd/SmtPG - SOT223Reel-1 Channel+/- 20 V5.2 nCEnhancement  
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