MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SUD50P06-15-GE3


MOSFET 60V 50A 113W 15mohm @ 10V
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Vishay 7760
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AUD 1.8491
Multiples of: 2000

   P - Channel  - 55 C+ 150 C Smd/SmtTO - 252Reel       
IPA60R190P6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
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Infineon 1940
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AUD 1.672
Multiples of: 500

            Coolmos P6      
SQJQ960EL-T1_GE3


MOSFET 60V Vds Dual N-Ch AEC-Q101 Qualified
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Vishay 1940
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AUD 1.8213
Multiples of: 2000

63 A60 V9 mOhmsN - Channel 2 V- 55 C+ 175 C71 WSmd/SmtPOWERPAK - 8X8 - 4Cut TapeSi2 Channel20 V19 nC Aec - Q101Trenchfet
TN0610N3-G-P013


Microchip Technology MOSFET N-CH Enhancmnt Mode MOSFET
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Microchip 1940
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AUD 1.8552
Multiples of: 1

500 mA100 V15 OhmsN - Channel  - 55 C+ 150 C1 WThrough HoleTO - 92 - 3Reel 1 Channel20 V Enhancement  
Hot TSM60NB260CI C0G


MOSFET 600V Power MOSFET Superjunction N-chan
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Taiwan Semiconductor 1940
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AUD 1.8561
Multiples of: 1

13 A600 V260 mOhmsN - Channel 2 V- 55 C+ 150 C32.1 WThrough HoleI TO - 220 - 3TubeSi1 Channel30 V30 nCEnhancement  
VN2450N8-G


Transistor: N-MOSFET; unipolar; 500V; 0.5A; 1.6W; SOT89-3
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Microchip 1940
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AUD 1.2593
Multiples of: 1

250 mA500 V13 OhmsN - Channel  - 55 C+ 150 C1.6 WSmd/SmtSOT - 89 (TO - 243AA)ReelSi1 Channel20 V Enhancement  
Hot IPB160N04S4H1ATMA1


Infineon Technologies MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T2
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Infineon 1940
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AUD 1.9039
Multiples of: 1000

160 A40 V1.4 mOhmsN - Channel 2 V- 55 C+ 175 C167 WSmd/SmtTO - 263 - 7ReelSi1 Channel20 V137 nCEnhancementAec - Q101 
IPB65R660CFDA


Infineon Technologies MOSFET N-Ch 650V 6A D2PAK-2
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Infineon 1940
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AUD 1.9349
Multiples of: 1

6 A650 V594 mOhmsN - Channel 3.5 V- 40 C+ 150 C62.5 WSMD/SMTD2PAK - 3 (TO - 263 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V20 nCEnhancementAEC - Q100CoolMOS
RSJ451N04FRATL


MOSFET Nch 40V Vdss 45A ID TO-263D2PAK; LPTS
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ROHM 1940
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AUD 1.9537
Multiples of: 1

45 A40 V13.5 OhmsN - Channel 1.2 V- 55 C+ 150 C50 WSmd/SmtTO - 263 - 3Cut Tape 1 Channel20 V43 nCEnhancementAec - Q101 
STP5NK80Z


Transistor: N-MOSFET; unipolar; 800V; 2.7A; 110W; TO220-3
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STMicroelectronics 1940
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AUD 2.4254
Multiples of: 1

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