MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
QH8MB5TCR


MOSFET 40V N&P-CHANNEL
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ROHM 1935
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AUD 0.5369
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4.5 A , 5 A40 V44 mOhms , 41 mOhmsN - Channel, P - Channel 2.5 V- 55 C+ 150 C1.5 WSMD/SMTT SMT - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V17.2 nCEnhancement  
SUD23N06-31-GE3


MOSFET N-Ch MOSFET 60V 31 mohm @ 10V
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Vishay 1935
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AUD 0.6604
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21.4 A60 V31 mOhmsN - Channel 1 V- 55 C+ 150 C31.25 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V11 nCEnhancement Trenchfet
SISS02DN-T1-GE3


MOSFET 25V Vds 16V Vgs PowerPAK 1212-8S
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Vishay 1935
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AUD 1.1163
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80 A25 V1.2 mOhmsN - Channel 1 V- 55 C+ 150 C65.7 WSmd/SmtPOWERPAK - 1212 - 8Cut TapeSi1 Channel- 12 v , 16 V83 nCEnhancement Trenchfet, Powerpak
R6011KNXC7G


MOSFET 600V POWER MOSFET
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ROHM 1935
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AUD 2.9615
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11 A600 V390 mOhmsN - Channel 5 V- 55 C+ 150 C53 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , + 20 V , - 30 V , + 30 V22 nCEnhancement  
R8011KNXC7G


MOSFET High-speed Switching Nch 800V 11A Power MOSFET
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ROHM 1935
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AUD 4.5385
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11 A800 V450 mOhmsN - Channel 4.5 V- 55 C+ 150 C65 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , + 20 V37 nCEnhancement  
SP85N02AGHTO


TOLL-8L MOSFETs ROHS
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Siliup 1935
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AUD 1.0637
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NCE30H10G


PDFN-8(5.1x5.8) MOSFETs ROHS
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NCE Power 1934
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AUD 0.3981
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TK750A60F,S4X(S


TO-220SIS MOSFETs ROHS
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Toshiba 1934
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AUD 0.6424
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TPSI4816BDY-T1-GE3


SOP8 MOSFETs ROHS
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TECH PUBLIC 1934
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AUD 0.9605
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IRF7343TRPBF


60V 5.3A 28mO@10V,5.3A 1PCSN-Channel&1PCSP-Channel SOP-8 MOSFETs ROHS
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VBsemi Elec 1928
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AUD 0.6021
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