MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC019N04LS


MOSFET MV POWER MOS
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Infineon 1930
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AUD 0.6192
Multiples of: 1

100 A40 V1.5 mOhmsN - Channel 1.2 V- 55 C+ 150 C78 WSmd/SmtTDSON - 8ReelSi1 Channel20 V57 nCEnhancement Optimos
R6061YNXC7G


MOSFETs Nch 600V 26A, TO-220FM, Power MOSFET: R6061YNX is a power MOSFET with Low on - resistance, suitable for switching.
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ROHM 1929
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AUD 9.0463
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26 A600 V60 mOhmsN - Channel 6 V- 55 C+ 150 C100 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 30 V , + 30 V76 nCEnhancement  
TPD65R600C


650V 7A 560mO@10V,3A 63W N Channel TO-252 MOSFETs ROHS
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UNIGROUP 1928
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AUD 0.5767
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NTMFS4C800NT1G


ON Semiconductor MOSFET NFET SO8FL 30V 69A 4MOHM
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ON Semiconductor 1928
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AUD 0.9813
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     4 V- 55 C+ 150 C smd/smtSO - FL - 8Reelsi1 channel 120 nCenhancement  
IRF7820TRPBF


International Rectifier MOSFET 200V, 3.7A, 78 mOhm 29 nC Qg, SO-8
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Infineon 1928
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AUD 1.0151
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3.7 A200 V78 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtSO - 8ReelSi1 Channel 28 nC   
IRFU2405PBF


Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; IPAK
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Infineon 1928
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AUD 1.0987
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56 A55 V16 mOhmsN - Channel    110 WThrough HoleIPAKTubeSi1 Channel20 V70 nC   
Hot BSC028N06LS3 G


MOSFET OptiMOS3 PWR-MOSFET N-CH
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Infineon 1921
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AUD 1.5735
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100 A60 V2.3 mOhmsN - Channel 1.2 V- 55 C+ 150 C139 WSmd/SmtTDSONReelSi1 Channel20 V175 nCEnhancement Optimos
ISC800P06LMATMA1


MOSFETs TRENCH >=100V
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Infineon 1899
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AUD 0.811
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19.6 A60 V80 mOhmsP - Channel 2 V- 55 C+ 175 C83 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V16 nCEnhancement  
SED10070GG


MOSFET N Trench 100V 70A 4V @ 250uA 9.8 mΩ @ 39A,10V DFN5*6 RoHS
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SINO-IC 1847
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AUD 0.463
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IRFR024TRPBF


N-Channel 60 V 14A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
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Vishay 0
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AUD 0.435
Multiples of: 2000

   N - Channel  - 55 C+ 150 C Smd/SmtDPAKReelSi      
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