MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STD4NK60ZT4


MOSFET N Trench 600V 4A (Tc) 4.5V @ 50uA 2 Ω @ 2A,10V DPAK RoHS
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STMicroelectronics 1920
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AUD 0.3574
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            Supermesh      
IRFR014PBF-BE3


N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-PAK (TO-252AA)
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Vishay 1920
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AUD 1.0549
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          TO - 252 - 3 , DPAK (2 Leads + Tab) , SC - 63TubeMosfet (Metal Oxide)      
ZVN4424A


N-Channel 240 V 260mA (Ta) 750mW (Ta) Through Hole TO-92
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Diodes Incorporated 1920
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AUD 1.3101
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260 mA240 V5.5 OhmsN - Channel 800 mV- 55 C+ 150 C750 mWThrough HoleTO - 92 - 3Cut TapeSi1 Channel10 V Enhancement  
PJP125N06SA-AU_T0_006A1


MOSFETs 60V N-Channel Enhancement Mode MOSFET, 60 V, 215 A
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Panjit 1920
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AUD 1.3742
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215 A60 V2.6 mOhmsN - Channel 3 V- 55 C+ 175 C214 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V82 nCEnhancementAEC - Q101 
ZXMHC10A07T8TA


MOSFET 100V 1.4A N-Channel MOSFET H-Bridge
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Diodes Incorporated 1920
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AUD 1.4118
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1.1 A100 V700 mOhms , 1 OhmsN_And_P - channel 2 V- 55 C+ 150 C1.3 WSmd/smtSM - 8ReelSi4 Channel20 V2.9 nC , 3.5 nCEnhancement  
R6511KNJTL


MOSFET NCH 650V 11A POWER MOSFET
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ROHM 1920
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AUD 3.3493
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           Cut Tape       
TSM018NM08TL RAG


MOSFETs 80V, 300A, Single, N-Channel Low Voltage MOSFETs
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Taiwan Semiconductor 1920
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AUD 4.1373
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334 A80 V1.8 mOhmsN - Channel 4.1 V- 55 C+ 150 C357 WSMD/SMTTOLL - A - 8Reel , Cut TapeSi1 Channel20 V179 nCEnhancement  
IPT60R090CFD7XTMA1


MOSFET HIGH POWER_NEW
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Infineon 1920
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AUD 4.3627
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28 A650 V90 mOhmsN - Channel 4 V- 55 C+ 150 C160 WSMD/SMTHSOF - 8Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V42 nCEnhancement  
IPT60R075CFD7XTMA1


N-Channel 600V 33A (Tc) 188W (Tc) Surface Mount PG-HSOF-8-1
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Infineon 1920
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AUD 4.909
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33 A650 V75 mOhmsN - Channel 4 V- 55 C+ 150 C188 WSMD/SMTHSOF - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V51 nCEnhancement  
AOD409(UMW)


TO-252 MOSFETs ROHS
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Youtai 1852
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AUD 0.266
Multiples of: 5

                   
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