MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AON6996


Transistor: N-MOSFET x2; unipolar; 30V; 31/38A; 8.3/8.6W; DFN5x6
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Alpha & Omega 1910
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AUD 0.629
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STP2N62K3


N-Channel 620 V 2.2A (Tc) 45W (Tc) Through Hole TO-220
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STMicroelectronics 1910
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AUD 0.8601
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2.2 A620 V3.6 OhmsN - Channel30 V - 55 C+ 150 C45 WThrough HoleTO - 220 - 3Tube   15 nC   
R6024VNXC7G


MOSFETs TO220 650V 72A N-CH MOSFET
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ROHM 1909
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AUD 3.3821
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13 A600 V153 mOhmsN - Channel 6.5 V- 55 C+ 150 C70 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 30 V , 30 V38 nCEnhancement  
SI2393DS-T1-BE3


MOSFETs P-CHANNEL 30-V (D-S) MOSFET
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Vishay 1908
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AUD 0.1724
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SH8MB4TB1


MOSFETs 40V 4.5A/5.5A, Dual Nch+Pch, SOP8, Power MOSFET
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ROHM 1908
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AUD 0.7339
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4.5 A , 5.5 A40 V , 40 V46 mOhms , 55 mOhmsN - Channel, P - Channel 2.5 V , 2.5 V- 55 C+ 150 C2 WSMD/SMTSOP - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V3.5 nC , 17.2 nCEnhancement  
EM6K34T2CR


ROHM Semiconductor MOSFET
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ROHM 1907
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AUD 0.1106
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200 mA50 V2.2 OhmsN - Channel 300 mV + 150 C150 mWSmd/SmtSOT - 563 - 6ReelSi2 Channel4.5 V Enhancement  
BUK7Y29-40EX


MOSFET N-channel 40 V 29 mo FET
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Nexperia 1907
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AUD 0.2758
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26 A40 V22.7 mOhmsn - channel 3 V- 55 C+ 175 C37 Wsmd/smtLFPAK56 - 5Reelsi1 channel20 V7.9 nCenhancement  
IPD50N08S4-13


MOSFET N-CHANNEL 75/80V
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Infineon 1907
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AUD 1.0642
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50 A80 V11.2 mOhmsN - Channel 2 V- 55 C+ 175 C72 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V30 nCEnhancementAec - Q101 
FDD8444


40V 145A 5.2mO@10V,50A 153W N Channel TO-252 MOSFETs ROHS
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ON Semiconductor 1892
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AUD 0.6393
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145 A40 V5.2 mOhmsN - Channel  - 55 C+ 175 C153 WSmd/SmtTO - 252ReelSi1 Channel20 V Enhancement Powertrench
IXTA3N120


MOSFET 3 Amps 1200V 4.5 Rds
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IXYS 393
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AUD 7.9627
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3 A1.2 kV4.5 Ohmsn - channel 2.5 V- 55 C+ 150 C150 Wsmd/smtTO - 263AA - 3Tubesi1 channel10 V42 nCenhancement  
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