MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Maximum Operating Temperature
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSZ16DN25NS3GATMA1


MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3
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Infineon 9700
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AUD 1.0379
Multiples of: 5000

           Reel      Optimos
SP8K32FRATB


MOSFET Nch+Nch 60V Vds 4.5A 0.055Rds(on) 7Qg
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ROHM 1919
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AUD 1.2396
Multiples of: 1

4.5 A60 V46 mOhmsN - Channel, Npn 1 V + 150 C2 WSmd/SmtSOP - 8Cut TapeSi2 Channel10 V7 nCEnhancementAec - Q101 
TSM60NE145CIT C0G


MOSFETs 600V, 14.5A, Single N-Channel High Voltage MOSFETs
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Taiwan Semiconductor 1919
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AUD 3.8746
Multiples of: 1

14.5 A600 V145 mOhmsN - Channel 6 V- 55 C+ 150 C69 WThrough HoleITO - 220TL - 3TubeSi1 Channel- 30 V , + 30 V40 nCEnhancement  
Si4128DY-T1-E3


MOSFET 30V 10.9A 5.0W 24mohm @ 10V
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Vishay 1918
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AUD 0.3546
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReelSi     Trenchfet
RD3G04BBKHRBTL


MOSFETs TO252 N-CH 40V 40A
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ROHM 1917
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AUD 0.7716
Multiples of: 1

40 A40 V7 mOhmsN - Channel 2.5 V- 55 C+ 175 C53 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel20 V14.9 nCEnhancement  
DMTH6005LPS-13


MOSFET 60V 175c N-Ch FET 5.5mOhm 10Vgs 100A
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Diodes Incorporated 1917
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AUD 0.9583
Multiples of: 1

   N - Channel     Smd/SmtPowerdi5060 - 8Cut TapeSi1 Channel     
IRF9Z10PBF


P-Channel 60 V 6.7A (Tc) 43W (Tc) Through Hole TO-220AB
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Vishay 1917
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AUD 1.0228
Multiples of: 1

   P - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3TubeSi      
RX3L18BBGC16


MOSFETs RX3L18BBG is a power MOSFET with low on-resistance and High power package, suitable for switching.
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ROHM 1917
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AUD 6.8791
Multiples of: 1

240 A60 V2.43 mOhmsN - Channel 2.5 V- 55 C+ 150 C192 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , + 20 V160 nCEnhancement  
JMSL0403AGQ-13


PDFN5x6-8L MOSFETs ROHS
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JieJie 1916
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AUD 0.6601
Multiples of: 1

                   
BSC060P03NS3EGATMA1


MOSFET SMALL SIGNALP-CH
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Infineon 1911
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AUD 0.8723
Multiples of: 1

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