MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDMC86160


Fairchild Semiconductor MOSFET 30V 2xNCh Power Clip PowerTrench MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 1916
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AUD 1.8287
Multiples of: 1

43 A100 V21 mOhmsN - Channel 2.9 V- 55 C+ 150 C54 WSmd/SmtMLP - 8ReelSi1 Channel 15 nC  Powertrench Power Clip
RX3P07CBHC16


MOSFETs RX3P07CBH is a power MOSFET with low on-resistance and high power small mold package, suitable for switching.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 1916
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AUD 4.5149
Multiples of: 1

120 A100 V5.2 mOhmsN - Channel 4 V- 55 C+ 150 C135 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , + 20 V73 nCEnhancement  
WGU5N60SE


TO-251 MOSFETs ROHS
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Wild Goose 1915
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AUD 0.1437
Multiples of: 5

                   
BUK9M67-60ELX


MOSFET SINGLE N-CHANNEL 60 V, 44 MOHM
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Nexperia 1915
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AUD 0.33
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20 A60 V44 mOhmsN - Channel 2.1 V- 55 C+ 175 C45 WSMD/SMTLFPAK - 8Reel , Cut TapeSi1 Channel- 10 V , + 10 V14 nCEnhancement  
PSMP033N10NS2_T0_00601


MOSFETs Excellent FOM / 100V/3.3mohm / TO-220AB-L
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Panjit 1915
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AUD 2.0194
Multiples of: 1

219 A100 V4.7 mOhmsN - Channel 3.8 V- 55 C+ 175 C333 WThrough HoleTO - 220AB - L - 3TubeSi1 Channel- 20 V , + 20 V65 nCEnhancement  
DMN2120UFCL-7


MOSFET MOSFET BVDSS: 8V 24V U-DFN1616-6 T&R 3K
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Diodes Incorporated 1914
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AUD 0.1149
Multiples of: 1

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WSP4409A


30V 15A 8mΩ@10V,15A 2.5W P Channel SOP-8 MOSFETs ROHS
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Winsok 1914
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AUD 0.2877
Multiples of: 1

                   
NVD6495NLT4G-VF01


MOSFET NFET DPAK 100V 23A 56MOHM
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ON Semiconductor 1914
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AUD 0.9163
Multiples of: 1

25 A100 V50 mOhmsN - Channel 1 V- 55 C+ 175 C83 WSmd/SmtDPAK - 3Cut TapeSi1 Channel20 V35 nCEnhancementAec - Q101 
IPD90N06S4L05ATMA2


MOSFET MOSFET
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Infineon 1912
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AUD 1.1883
Multiples of: 1

   N - Channel     Smd/SmtTO - 252 - 3Cut TapeSi1 Channel   Aec - Q101 
IPD95R1K2P7ATMA1


Transistor: N-MOSFET; unipolar; 950V; 3.7A; 52W; DPAK
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Infineon 1905
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AUD 0.8537
Multiples of: 1

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