MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
R8003KNXC7G


MOSFET 800V 3A, TO-220FM, High-speed switching Power MOSFET.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 1928
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AUD 1.7239
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3 A800 V1.8 OhmsN - Channel 4.5 V- 55 C+ 150 C36 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , + 20 V11.5 nCEnhancement  
TSM60NE180CIT C0G


MOSFETs 600V, 13A, Single N-Channel High Voltage MOSFETs
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Taiwan Semiconductor 1928
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AUD 3.5134
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13 A600 V180 mOhmsN - Channel 6 V- 55 C+ 150 C63 WThrough HoleITO - 220TL - 3TubeSi1 Channel- 30 V , + 30 V34 nCEnhancement  
R6027YNXC7G


MOSFETs Nch 600V 14A, TO-220FM, Power MOSFET: R6027YNX is a power MOSFET with low on - resistance, suitable for switching.
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ROHM 1928
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AUD 4.9418
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 600 V N - Channel   + 150 C Through HoleTO - 220 - 3TubeSi1 Channel     
CPH6635-TL-H


MOSFET NCH+PCH 1.8V DRIVE SERIES
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ON Semiconductor 1927
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AUD 0.2709
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400 mA30 V280 mOhmsN - Channel10 V - 55 C+ 150 C800 mWSmd/SmtSC - 74 - 6ReelSi2 Channel10 V1.58 nC   
STD12NF06T4


Transistor: N-MOSFET; unipolar; 60V; 8.5A; 30W; DPAK
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STMicroelectronics 1927
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AUD 0.3399
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            Supermesh      
IPP055N08NF2SAKMA1


MOSFET TRENCH 40<-<100V
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Infineon 1927
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AUD 1.2576
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99 A80 V5.5 mOhmsN - Channel 3.8 V- 55 C+ 175 C107 WThrough Hole TubeSi1 Channel- 20 V , + 20 V36 nCEnhancement  
R6509ENXC7G


MOSFET 650V POWER MOSFET
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ROHM 1927
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AUD 2.5192
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9 A650 V585 mOhmsN - Channel 4 V- 55 C+ 150 C48 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , 20 V24 nCEnhancement  
STI260N6F6


MOSFET N-ch 60V 0.0024 Ohm 120 A STripFET VI
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STMicroelectronics 1927
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AUD 4.7537
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120 A60 V3 mOhmsN - Channel  - 55 C+ 175 C300 WThrough HoleI2PAK - 3Tube 1 Channel20 V    
SL80N08D


30V 5.5mΩ@10V 2.5V N Channel TO-252 MOSFETs ROHS
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SLKORMICRO 1927
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AUD 0.6319
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IPD60R600P6ATMA1


MOSFET LOW POWER_LEGACY
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Infineon 1926
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AUD 0.7158
Multiples of: 1

 600 V       Smd/SmtTO - 252 - 3Cut TapeSi     Coolmos
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