MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FCP7N60


MOSFET 600V N-Channel SuperFET
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ON Semiconductor 1926
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AUD 1.8881
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7 A600 V530 mOhmsN - Channel  - 55 C+ 150 C83 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V Enhancement Superfet
BSS138Q-7-F


Trans MOSFET N-CH 50V 0.2A Automotive 3-Pin SOT-23 T/R
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Diodes Incorporated 1925
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AUD 0.0752
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200 mA50 V3.5 OhmsN - Channel 500 mV- 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V EnhancementAec - Q101 
NTMFS4C06NCT1G


MOSFETs NFET SO8FL 30V 69A 4MOHM
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ON Semiconductor 1925
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AUD 0.2085
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20 A30 V4 mOhmsN - Channel 2.1 V- 55 C+ 150 C2.55 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V11.6 nCEnhancement  
TMP3040DF


PDFN3x3-8L MOSFETs ROHS
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Tritech-MOS 1925
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AUD 0.2372
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IRLHS6242TRPBF


Transistor: N-MOSFET; unipolar; 20V; 10A; 1.98W; PQFN2X2
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Infineon 1925
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AUD 0.2269
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22 A20 V11.7 mOhmsN - Channel 1.1 V- 55 C+ 150 C9.6 WSmd/SmtPQFN - 6ReelSi1 Channel12 V14 nCEnhancement  
DMN2009LSS-13-JSM


SOP-8 MOSFETs ROHS
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JSMSEMI 1925
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AUD 0.3167
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PSMNR98-25YLEX


MOSFETs PSMNR98-25YLE/SOT669/LFPAK
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Nexperia 1925
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AUD 1.3463
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255 A25 V1.1 mOhmsN - Channel 2.2 V- 55 C+ 175 C198 WSMD/SMTSOT - 669 - 5Reel , Cut TapeSi1 Channel- 20 V , 20 V27 nCEnhancement  
IRL620PBF-BE3


N-Channel 200V 5.2A (Tc) 50W (Tc) Through Hole TO-220AB
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Vishay 1925
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AUD 1.392
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5.2 A200 V800 mOhmsN - Channel 2 V- 55 C+ 150 C50 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 10 V , + 10 V16 nCEnhancement  
TSM60NE200CIT C0G


MOSFETs 600V, 12A, Single N-Channel High Voltage MOSFETs
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Taiwan Semiconductor 1924
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AUD 3.0701
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12 A600 V200 mOhmsN - Channel 6 V- 55 C+ 150 C63 WThrough HoleITO - 220TL - 3TubeSi1 Channel- 30 V , + 30 V30 nCEnhancement  
DMN24H3D5L


SOT-23-3L MOSFETs ROHS
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TECH PUBLIC 1872
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AUD 0.2492
Multiples of: 5

                   
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