MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF730PBF


N-Channel 400 V 5.5A (Tc) 74W (Tc) Through Hole TO-220AB
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Vishay 1936
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AUD 0.8675
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5.5 A400 V1 OhmsN - Channel 2 V- 55 C+ 150 C74 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V38 nCEnhancement  
SH8M24TB1


Mosfet Array N and P-Channel 45V 4.5A, 3.5A 2W Surface Mount 8-SOP
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ROHM 1936
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AUD 1.1829
Multiples of: 1

4.5 A45 V46 mOhmsN And P - Channel   + 150 C2 WSmd/SmtSOP - 8ReelSi2 Channel     
TK125U60Z1,RQ


MOSFETs N-ch MOSFET, 600 V, 0.125 ohma.10V, TOLL, DTMOS?
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Toshiba 1936
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AUD 3.1851
Multiples of: 1

20 A600 V125 mOhmsN - Channel 4 V + 150 C150 WSMD/SMTTOLL - 9Reel , Cut TapeSi1 Channel30 V28 nCEnhancement  
TK080U60Z1,RQ


MOSFETs 600V Silicon N-Channel MOS (DTMOS) MOSFET
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Toshiba 1936
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AUD 4.6463
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30 A600 V80 mOhmsN - Channel 4 V + 150 C211 WSMD/SMTTOLL - 9Reel , Cut TapeSi1 Channel30 V43 nCEnhancement  
IPT60R045CFD7XTMA1


N-Channel 600V 52A (Tc) 270W (Tc) Surface Mount PG-HSOF-8-1
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Infineon 1936
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AUD 8.0683
Multiples of: 1

52 A600 V45 mOhmsN - Channel 4 V- 55 C+ 150 C270 WSMD/SMTHSOF - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V79 nCEnhancement  
SE2060


MOSFET N Trench 20V 60A 1.4V @ 250uA 8 mΩ @ 20A,4.5V DFN-8 RoHS
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SINO-IC 1935
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AUD 0.0854
Multiples of: 5

                   
BXP2N20L


Transistor: N-MOSFET
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Bridgelux 1935
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AUD 0.1379
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IRF7807


SOP-8 MOSFETs ROHS
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TECH PUBLIC 1935
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AUD 0.1656
Multiples of: 5

                   
TM20H04DF


40V 20A 25m PDFN3x3-8L MOSFETs ROHS
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Tritech-MOS 1935
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AUD 0.2684
Multiples of: 5

                   
QS5U27TR


20V 1.5A 1.25W 200mO@4.5V,1.5A P Channel SOT-23-5 MOSFETs ROHS
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ROHM 1935
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AUD 0.4104
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1.5 A20 V200 mOhmsP - Channel  - 55 C+ 150 C1.25 WSmd/SmtT SMT - 5ReelSi1 Channel12 V Enhancement  
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