MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SP85N01GHTO


TOLL-8L MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Siliup 1971
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AUD 1.1592
Multiples of: 1

                   
CDM7-600LR TR13


MOSFET 600V N-Ch PFC FET 0.53Ohm 30Vgs 60W
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Central Semiconductor 1964
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AUD 1.1429
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7 A600 V580 mOhmsN - Channel 2 V- 55 C+ 150 C60 WSmd/SmtDPAK - 3ReelSi1 Channel30 V14.5 nCEnhancement Ultramos
IRLU7843PBF


Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; IPAK
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Infineon 1964
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AUD 1.4894
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161 A30 V4 mOhmsN - Channel    140 WThrough HoleIPAKTubeSi1 Channel20 V34 nC   
RSD080P05TL


MOSFET TRNSISTR 4V DRVE PCH MOSFET CPT PKG
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ROHM 1963
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AUD 0.6296
Multiples of: 1

8 A45 V65 mOhmsP - Channel 3 V- 55 C+ 150 C15 WSmd/SmtTO - 252 - 3Tape And ReelSi1 Channel20 V9 nCEnhancement  
IRF6811STRPBF


International Rectifier MOSFET 25V 1 N-CH HEXFET 3.7mOhms 11nC
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Infineon 1962
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AUD 1.1843
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74 A25 V5.4 mOhmsN - Channel    32 WSmd/SmtDirectfet - 6ReelSi1 Channel16 V11 nC  Directfet
DMTH8003SPS-13


MOSFET MOSFET BVDSS: 61V-100V
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Diodes Incorporated 1961
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AUD 1.2576
Multiples of: 1

100 A80 V3.9 mOhmsN - Channel 2 V- 55 C+ 175 C125 WSmd/SmtPowerdi5060 - 8Cut TapeSi1 Channel20 V124.3 nCEnhancement  
FDN308P(UMW)


SOT-23 MOSFETs ROHS
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Youtai 1959
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AUD 0.0417
Multiples of: 10

                   
AON6552


Transistor: N-MOSFET; unipolar; 30V; 23A; 10W; DFN5x6
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Alpha & Omega 1950
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AUD 0.4137
Multiples of: 1

                   
HL2304


30V 3.6A 60m@10V,3.6A 1W 2.2V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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hongjiacheng 1920
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AUD 0.0391
Multiples of: 20

                   
R6014YNXC7G


MOSFET 600V 9AR MOSFET
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ROHM 24
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AUD 2.3313
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14 A600 V260 mOhmsN - Channel 6 V- 55 C+ 150 C54 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 30 V , 30 V20 nCEnhancement  
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