MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FS3415K


20V 5.6A 36mO@4.5V,5.6A 1.3W P Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

FUXINSEMI 1978
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AUD 0.0649
Multiples of: 10

                   
SQJB48EP-T1_JE3


MOSFETs DUAL N-CHANNEL 40-V (D-S) 175C MOSFET
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Vishay 1973
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AUD 0.9178
Multiples of: 1

30 A40 V5.2 mOhmsN - Channel 3.3 V- 55 C+ 175 C48 WSMD/SMTSO - 8 Si2 Channel- 20 V , + 20 V25.3 nCEnhancement  
AUIRFR8401TRL


International Rectifier MOSFET Auto 40V N-Ch FET 4.3mOhms 100A
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Infineon 1971
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AUD 1.5876
Multiples of: 1

100 A40 V4.25 mOhmsN - Channel    79 WSmd/SmtDPAK - 3ReelSi1 Channel 42 nC Aec - Q101Coolirfet
NTB6413ANT4G


MOSFET NFET D2PAK 100V 40A 30MO
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ON Semiconductor 1971
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AUD 1.6739
Multiples of: 1

42 A100 V28 mOhmsN - Channel  - 55 C+ 175 C136 WThrough HoleD2PAKReelSi1 Channel20 V    
15N06G-TN3-R


TO-252 MOSFETs ROHS
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Unisonic 1969
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AUD 0.2055
Multiples of: 5

                   
AP4435GM


MOSFET P Trench 30V 9A 3V @ 250uA 20 mΩ @ 7A,10V SOIC-8_150mil RoHS
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APEC 1969
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AUD 0.4588
Multiples of: 5

                   
DMP2040UVT-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 1963
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AUD 0.2364
Multiples of: 1

13 A20 V38 mOhmsP - Channel 1.5 V- 55 C+ 150 C1.5 WSmd/SmtTSOT - 26 - 6Cut TapeSi1 Channel12 V19 nCEnhancement  
IPD068P03L3G(UMW)


TO-252 MOSFETs ROHS
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Youtai 1935
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AUD 0.2724
Multiples of: 5

                   
CMUDM7001 TR


Central Semiconductor MOSFET N-Ch Enh Mode FET 20Vds 10Vgs 250mW
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Central Semiconductor 1870
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AUD 0.1412
Multiples of: 1

100 mA20 V3 OhmsN - Channel 0.9 V- 65 C+ 150 C250 mWSmd/SmtSOT - 523 - 3ReelSi1 Channel10 V0.566 nCEnhancement Ultramini
DMN60H080DS-7


MOSFET BVDSS: 501V~650V SSOT23 T&R 3K
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Diodes Incorporated 1852
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AUD 0.1471
Multiples of: 5

80 mA600 V100 OhmsN - Channel 1.5 V- 55 C+ 150 C1.1 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V1.7 nCEnhancement  
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