MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NCEP4065QU


DFN-8(3.1x3.2) MOSFETs ROHS
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NCE Power 6984
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AUD 0.5245
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AGM601LL


60V 223A 178W 1.25m@10V,30A 1.6V@250uA 1PCSNChannel TOLL-8L MOSFETs ROHS
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AGM-Semi 2022
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AUD 1.2019
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DMNH10H028SK3Q-13


MOSFET 100V 175c N-Ch FET 28mOhm 10V 55A
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Diodes Incorporated 1986
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AUD 1.5679
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55 A100 V28 mOhmsN - Channel 2 V- 55 C+ 175 C2 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V36 nCEnhancementAEC - Q101 
BUK9Y107-80EX


N-Channel 80 V 11.8A (Tc) 37W (Tc) Surface Mount LFPAK56, Power-SO8
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Nexperia 1984
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AUD 0.2561
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11.8 A80 V89.7 mOhmsN - Channel15 V1.7 V- 55 C+ 175 C37 WSmd/SmtLFPAK56 - 4ReelSi1 Channel10 V6.2 nCEnhancement  
STL20N6F7


Transistor: N-MOSFET; STripFET™ F7; unipolar; 60V; 12A; 78W
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STMicroelectronics 1984
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AUD 1.2955
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            Stripfet F7      
FDBL9401-F085T6


N-Channel 40V 58.4A (Ta), 240A (Tc) 4.3W (Ta), 180.7W (Tc) Surface Mount 8-HPSOF
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ON Semiconductor 1984
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AUD 7.109
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240 A40 V670 uOhmsN - Channel 4 V- 55 C+ 175 C180.7 WSMD/SMTTO - LL8 - 8Reel , Cut TapeSi1 Channel- 16 V , 20 V148 nCEnhancement  
20N03


TO-252 MOSFETs ROHS
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GOODWORK 1983
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AUD 0.0782
Multiples of: 5

                   
LGE2305


Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.7W; SOT23
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Luguang 1983
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AUD 0.0815
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IXTP96P085T


MOSFET -96 Amps -85V 0.013 Rds
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IXYS 1978
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AUD 6.4358
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96 A85 V13 mOhmsP - Channel 2 V- 55 C+ 150 C298 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V180 nCEnhancement  
IRFP450APBF


N-Channel 500 V 14A (Tc) 190W (Tc) Through Hole TO-247AC
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Vishay 1972
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AUD 2.791
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14 A500 V400 mOhmsN - Channel 2 V- 55 C+ 150 C190 WThrough HoleTO - 247 - 3TubeSi1 Channel10 V64 nCEnhancement  
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