MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTR4003NT1G


SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

TECH PUBLIC 1998
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AUD 0.0562
Multiples of: 10

                   
RUM003N02T2L


N-Channel 20 V 300mA (Ta) 150mW (Ta) Surface Mount VMT3
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ROHM 1988
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AUD 0.0806
Multiples of: 5

300 mA20 V1 OhmsN - Channel 300 mV- 55 C+ 150 C150 mWSmd/SmtVMT - 3ReelSi1 Channel4 V Enhancement  
4N50


500V 4A 2.4mΩ 4V N Channel TO-252 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HL 1988
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AUD 0.1165
Multiples of: 5

                   
RHP030N03T100


N-Channel 30 V 3A (Ta) 500mW (Ta) Surface Mount MPT3
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ROHM 1988
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AUD 0.3237
Multiples of: 1

3 A30 V160 mOhmsN - Channel    2 WThrough HoleMPT3ReelSi1 Channel20 V Enhancement  
IRF9333PbF


Trans MOSFET P-CH 30V 9.2A 8-Pin SOIC N Tube
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Infineon 1988
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AUD 0.4634
Multiples of: 1

9.2 A30 V32.5 mOhmsP - Channel    2.5 WSmd/SmtSOIC - 8TubeSi 20 V14 nC   
STP100N6F7


Transistor: N-MOSFET; unipolar; 60V; 75A; 125W; TO220-3
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STMicroelectronics 1988
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AUD 1.1565
Multiples of: 1

                   
FDMA8878


MOSFET N-CHAN 30V 9A 2.4W
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ON Semiconductor 1988
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AUD 1.1746
Multiples of: 1

9 A30 V16 mOhmsN - Channel  - 55 C+ 150 C2.4 WSmd/SmtMICRO - FET 2 x 2ReelSi1 Channel    Powertrench
FCD5N60_F085


MOSFET Automotive / SuperFET1 / 600V / 4.6A / 1.05 OHM
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ON Semiconductor 1988
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AUD 1.4604
Multiples of: 1

4.6 A600 V3.2 Ohmsn - channel 3 V- 55 C+ 150 C54 Wsmd/smtTO - 252 - 3Reelsi1 channel+/- 30 V16 nCenhancement superfet
TK12A60W,S4VX


Toshiba MOSFET N-Ch 600V 11.5A 35W DTMOSIV 890pF 25nC
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Toshiba 1987
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AUD 1.3798
Multiples of: 1

11.5 A600 V265 mOhmsN - Channel 2.7 v to 3.7 V + 150 C35 WThrough HoleTO - 220 - 3ReelSi1 Channel30 V25 nCEnhancement Dtmosiv
HSBA4113


40V 27A 40mΩ@10V,18A 42W P Channel PRPAK-5x6 MOSFETs ROHS
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HUASHUO 1978
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AUD 0.1963
Multiples of: 5

                   
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