MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI8497DB-T2-E1


P-Channel 30 V 13A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-microfoot
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Vishay 2002
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AUD 0.3481
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13 A30 V43 mOhmsP - Channel 1.1 V- 55 C+ 150 C13 WSmd/SmtMICRO - FOOT 1.5 x 1ReelSi1 Channel12 V49 nCEnhancement Trenchfet
HD2302


MOSFET N Channel 20V 2.1A 1.2V @ 50uA 60mO @ 3.6A,4.5V SOT-23 RoHS
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High Diode 1998
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AUD 0.0228
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ZXMN2F30FHTA


SOT-23 MOSFETs ROHS
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TECH PUBLIC 1998
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AUD 0.058
Multiples of: 10

                   
SI3590DV


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 1998
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AUD 0.1191
Multiples of: 5

                   
IRF7469TR(UMW)


SOP-8 MOSFETs ROHS
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Youtai 1998
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AUD 0.2096
Multiples of: 5

                   
DMG4800LSD-13


MOSFET Dual N-Ch 30V VDSS 25 Vgss 42A IDM
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Diodes Incorporated 1998
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AUD 0.2714
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7.5 A30 V16 mOhmsN - Channel 800 mV- 55 C+ 150 C1.17 WSmd/SmtSO - 8Cut TapeSi2 Channel10 V8.56 nCEnhancement  
AGM305MD


TO-252-4L MOSFETs ROHS
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AGM-Semi 1998
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AUD 0.3411
Multiples of: 5

                   
BUK7Y3R5-40E,115


MOSFET BUK7Y3R5-40E/LFPAK/REEL 7" Q1/
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Nexperia 1998
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AUD 0.6534
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100 A40 V3.5 mOhmsN - Channel 2.4 V- 55 C+ 175 C167 WSmd/SmtLFPAK56 - 5Cut TapeSi1 Channel20 V49.4 nCEnhancement  
FDD5N50TM_WS


MOSFET UniFET 500V 4A
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ON Semiconductor 1997
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AUD 0.7115
Multiples of: 1

4 A500 V1.4 OhmsN - Channel  - 55 C+ 150 C40 WSmd/SmtDPAKReelSi1 Channel30 V Enhancement  
FDV303N(UMW)


SOT-23 MOSFETs ROHS
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Youtai 1978
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AUD 0.0318
Multiples of: 20

                   
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