MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AP6P025M


SO-8 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

APEC 1983
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AUD 0.3726
Multiples of: 1

                   
DMC1018UPD-13


MOSFET MOSFET BVDSS: 8V-24V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 1983
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AUD 0.4006
Multiples of: 1

         Smd/SmtPowerdi5060 - C - 8Cut TapeSi      
SQJB44EP-T1_BE3


MOSFETs DUAL N-CHANNEL 40-V (D-S) 175C MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 1983
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AUD 0.9178
Multiples of: 1

           Reel , Cut TapeSi      
IPD35N10S3L26ATMA2


MOSFETs 100 V, N-Ch, 24 m? max, Automotive MOSFET, DPAK, OptiMOS-T
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 1981
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AUD 1.0672
Multiples of: 1

35 A100 V24 mOhmsN - Channel 2.4 V- 55 C+ 175 C71 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V30 nCEnhancement OptiMOS
WMO11N60C2


Transistor: N-MOSFET; SJ-MOSFET C2; unipolar; 600V; 9A; 63W; TO252
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Wayon 1979
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AUD 0.8734
Multiples of: 1

            Sj - Mosfet C2      
IRLML2803


MOSFET N Channel 20V 2A 1.2V @ 250uA 45mO @ 2A,4.5V SOT-23 RoHS
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Shikues 1978
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AUD 0.0339
Multiples of: 20

                   
PJ8205


20V 5A 20mO@4.5V,5A 1.25W 2 N-Channel SOT-23-6 MOSFETs ROHS
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Pingjingsemi 1978
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AUD 0.0399
Multiples of: 10

                   
D11N20


200V 11A 2V TO-252-2 MOSFETs ROHS
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Jingdao 1978
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AUD 0.1838
Multiples of: 5

                   
BS170-D75Z


Trans MOSFET N-CH 60V 0.5A 3-Pin TO-92 Ammo
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ON Semiconductor 1788
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AUD 0.1857
Multiples of: 1

           Ammo    Enhancement  
CJ2307


MOSFET P Trench 30V 2.7A 3V @ 250uA 138 mΩ @ 2.5A,4.5V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 1668
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AUD 0.0506
Multiples of: 10

                   
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