MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSO080P03S H


MOSFET P-Ch -30V -14.9A DSO-8 OptiMOS P
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Infineon 1967
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AUD 1.2872
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14.9 A30 V8 mOhmsP - Channel  - 55 C+ 150 C2.5 WSmd/SmtPG - DSO - 8ReelSi1 Channel25 V- 102 nCEnhancement Optimos
IPD130N10NF2SATMA1


MOSFETs N
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Infineon 1965
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AUD 0.7684
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52 A100 V13 mOhmsN - Channel 2.2 V- 55 C+ 175 C71 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut Tape 1 Channel- 20 V , + 20 V18.6 nCEnhancement  
ASDM20N20KQ-R


20V 20A 20mΩ@4.5V,8A 32W 1V@250uA 80pF@15V N Channel 515pF@15V 10nC@4.5V -55℃~+150℃@(Tj) TO-252 MOSFETs ROHS
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Ascend 1964
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AUD 0.0979
Multiples of: 5

                   
IPD85P04P4L06ATMA2


MOSFET MOSFET_20V 40V
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Infineon 1964
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AUD 1.0688
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           Cut Tape       
DMP2008UFG-13


Diodes Incorporated MOSFET 20V P-CH MOSFET
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Diodes Incorporated 1957
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AUD 0.3809
Multiples of: 1

14 A20 V8 mOhmsP - Channel 1 V- 55 C+ 150 C2.4 WSmd/SmtPowerdi3333 - 8ReelSi1 Channel8 V72 nCEnhancement  
FH8712K2


SOT-23-6 MOSFETs ROHS
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Xinfeihong 1954
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AUD 0.1098
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RRR030P03TL


MOSFET Med Pwr, Sw MOSFET P Chan, -30V, -3A
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ROHM 1954
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AUD 0.2583
Multiples of: 5

3 A30 V55 mOhmsP - Channel 2.5 V  1 WSmd/SmtT SMT 3ReelSi1 Channel20 V5.2 nC   
CS630A4H


200V 9A 83W 280mO@10V,5.4A N Channel TO-252 MOSFETs ROHS
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Huajing 1784
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AUD 0.2281
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IPA030N10NF2SXKSA1


MOSFET TRENCH >=100V
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Infineon 996
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AUD 2.7254
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83 A100 V3 mOhmsN - Channel 3 V- 55 C+ 175 C41 WThrough HoleTO - 220 - 3 - FPTubeSi1 Channel- 20 V , + 20 V154 nCEnhancement  
STU2N62K3


MOSFET N-Ch 620V 3 Ohm 2.2A SuperMESH
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STMicroelectronics 0
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AUD 0.8649
Multiples of: 2025

2.2 A620 V3.6 Ohmsn - channel  - 55 C+ 150 C45 Wthrough holeIPAKTubesi1 channel30 V15 nC  mdmesh
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