MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HY12P03C2


MOSFET P Trench 30V 50A (Tc) 3V @ 250uA 11.5 mΩ @ 12A,10V PPAK5*6-8L RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HuaYi 1978
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AUD 0.1866
Multiples of: 5

                   
BRCS850N10SDPQ


TO-252 MOSFETs ROHS
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Blue Rocket 1978
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AUD 0.1961
Multiples of: 5

                   
FDS8984


SOIC-8 MOSFETs ROHS
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TECH PUBLIC 1978
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AUD 0.2575
Multiples of: 5

                   
WSP4410


MOSFET N Trench 30V 20A (Tc) 2.5V @ 250uA 5.5 mΩ @ 20A, 10V SOP-8_150mil RoHS
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Winsok 1977
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AUD 0.302
Multiples of: 1

                   
TN2404K-T1-BE3


MOSFETs N-CHANNEL 240-V (D-S) MOSFET
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Vishay 1976
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AUD 0.266
Multiples of: 1

200 mA257 V2.2 OhmsN - Channel 1.65 V- 55 C+ 150 C360 mWSMD/SMTSOT - 23 - 3 Si1 Channel- 20 V , 20 V4.87 nCEnhancement  
2N7002PS,125


MOSFET N-CH 60 V 320 mA
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Nexperia 1974
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AUD 0.0657
Multiples of: 1

320 mA60 V1.6 OhmsN - Channel    280 mWSmd/SmtSOT - 363ReelSi2 Channel 800 pC   
LSG65R650HT


MOSFET N Trench 650V 7A 4.5V @ 250uA 650 mΩ @ 3.5A,10V TO-252 RoHS
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Lonten Semiconductor 1974
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AUD 1.7322
Multiples of: 1

                   
DMN3110S-7


MOSFET MOSFET BVDSS: 25V-30 SOT23,3K
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Diodes Incorporated 1973
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AUD 0.1277
Multiples of: 5

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 23 - 3Reel       
IPB043N10NF2SATMA1


MOSFETs N
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Infineon 1962
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AUD 1.3348
Multiples of: 1

135 A100 V4.35 mOhmsN - Channel 2.2 V- 55 C+ 175 C167 WSMD/SMTD2PAK - 3 (TO - 263 - 3)Reel , Cut Tape 1 Channel- 20 V , + 20 V57 nCEnhancement  
RSR020N06HZGTL


MOSFET NCH 60V 2A SMALL SIGNAL MOSFET
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ROHM 1804
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AUD 0.2938
Multiples of: 5

2 A60 V170 mOhmsN - Channel 2.5 V- 55 C+ 150 C1 WSmd/SmtSC - 96 - 3Cut TapeSi1 Channel20 V2.7 nCEnhancementAec - Q101 
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