MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
YJG210G06AR


60V 210A 208W 1.6m@10V 1V@250uA 1 N-Channel PDFN5060-8L MOSFETs ROHS
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Yangjie 2069
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AUD 1.1374
Multiples of: 1

                   
SP40N13T1


SOT-23-3L MOSFETs ROHS
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Siliup 1959
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AUD 0.0524
Multiples of: 10

                   
IRLML2244


SOT-23 MOSFETs ROHS
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Leiditech 1959
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AUD 0.1332
Multiples of: 5

                   
NTZD3155CT2G


ON Semiconductor MOSFET COMP 540mA 20V
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ON Semiconductor 1959
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AUD 0.1435
Multiples of: 5

540 mA , - 430 mA20 V1 OhmsN - Channel, P - Channel 1 V- 55 C+ 150 C250 mWSmd/SmtSOT - 563 - 6ReelSi2 Channel6 V1.5 nC , 1.7 nCEnhancement  
AP2N65K


650V 2A 4Ω@30V,2A null TO-252 MOSFETs ROHS
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Quan Li 1959
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AUD 0.21
Multiples of: 5

                   
IPD60R400CE


600V 14.7A 400mO@10V,3.8A 112W N Channel TO-252-3 MOSFETs ROHS
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Infineon 1959
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AUD 0.7
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R6020YNXC7G


MOSFET 600V 12A MOSFET
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ROHM 1958
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AUD 2.7746
Multiples of: 1

20 A600 V185 mOhmsN - Channel 6 V- 55 C+ 150 C62 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 30 V , 30 V28 nCEnhancement  
FDD3680


MOSFET 100V NCh PowerTrench
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ON Semiconductor 1956
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AUD 1.9532
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   N - Channel  - 55 C+ 175 C Smd/SmtTO - 252AAReel       
CJQ9435


MOSFET P Trench 30V 5.1A 2V @ 250uA 60 mΩ @ 4.6A,10V SOP-8_150mil RoHS
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Changjing Electronics Technology 1862
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AUD 0.1284
Multiples of: 5

                   
RHU002N06T106


N-Channel 60 V 200mA (Ta) 200mW (Ta) Surface Mount UMT3
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ROHM 727
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AUD 0.0463
Multiples of: 10

   N - Channel  - 55 C+ 150 C Smd/SmtUMT - 3Reel       
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