MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPL65R160CFD7AUMA1


MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 1956
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AUD 2.6104
Multiples of: 1

17 A650 V160 mOhmsN - Channel 4.5 V- 40 C+ 150 C98 WSMD/SMTVSON - 4Reel , Cut TapeSi1 Channel- 20 V , + 20 V28 nCEnhancement  
RD3P06BBLHRBTL


MOSFETs Discrete Semiconductors, MOSFETs, Nch 100V 57A, TO-252 (DPAK), Power MOSFET for Automotive
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ROHM 1955
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AUD 1.036
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57 A100 V16.8 mOhmsN - Channel 4 V- 55 C+ 175 C76 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel20 V17.3 nCEnhancementAEC - Q101 
PSMNR90-40YLHX


MOSFET PSMNR90-40YLHSOT10234 LEADS
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Nexperia 1955
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AUD 1.8552
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300 A40 V940 uOhmsN - Channel 1.35 V- 55 C+ 175 C333 WSmd/SmtLFPAK56E - 4Cut TapeSi1 Channel20 V120 nCEnhancement  
UT3401G-AE3-R


MOSFET P Trench 30V 4.2A 1.3V @ 250uA 50 mΩ @ 4.2A,10V SOT-23 (SOT-23-3) RoHS
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Unisonic 1954
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AUD 0.1011
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TPM9305PS3


SOT-23 MOSFETs ROHS
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TECH PUBLIC 1954
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AUD 0.1463
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IPD040N03L G


MOSFET N-Ch 30V 90A DPAK-2 OptiMOS 3
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Infineon 1954
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AUD 0.8209
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90 A30 V4 mOhmsN - Channel  - 55 C+ 175 C79 WSmd/SmtTO - 252ReelSi1 Channel20 V Enhancement Optimos
NTTFS2D8N04HLTAG


MOSFET 40V T8 IN U8FL HEFET
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ON Semiconductor 1954
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AUD 0.8242
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           Cut Tape       
R6055VNXC7G


MOSFETs 600V 23A TO-220FM POWER MOSFET
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ROHM 1954
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AUD 7.306
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23 A600 V71 mOhmsN - Channel 6.5 V- 55 C+ 150 C100 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 30 V , + 30 V80 nCEnhancement  
IRFR5305TR(UMW)


TO-252 MOSFETs ROHS
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Youtai 1697
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AUD 0.2164
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FH1404G6


PDFN-8(3x3.2) MOSFETs ROHS
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Xinfeihong 1542
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AUD 0.2031
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