MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDMC8200


MOSFET DUAL N-CHANNEL PowerTrench
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 1984
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AUD 0.5122
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18 A30 V16 mOhmsn - channel  - 55 C+ 150 C1.9 w , 2.2 Wsmd/smtPOWER 33Reelsi2 channel20 V7.3 nC , 16 nCenhancement powertrench
DIT090N06


Transistor: N-MOSFET; unipolar; 65V; 62A; Idm:310A; 160W; TO220AB
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Diotec 1953
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AUD 1.0113
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SQJ118ELP-T1_GE3


MOSFETs N-CHANNEL 100-V (D-S) 175C MOSFET
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Vishay 1952
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AUD 0.706
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36 A100 V395 mOhmsN - Channel 3.5 V- 55 C+ 175 C75 WSMD/SMTPOWERPAK SO - 8LReel , Cut TapeSi1 Channel- 10 V , + 10 V60 nCEnhancement  
FDMC7572S


Fairchild Semiconductor MOSFET 25V 40A 3.2mOhm N-Ch PowerTrench SyncFET
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ON Semiconductor 1952
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AUD 1.9953
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40 A25 V3.2 mOhmsn - channel 1.7 V- 55 C+ 150 C52 Wsmd/smtPOWER - 33 - 8Reelsi1 channel    syncfet
DMN2040LTS-13


Mosfet Array 2 N-Channel (Dual) Common Drain 20V 6.7A (Ta) 890mW Surface Mount 8-TSSOP
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 1951
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AUD 0.3343
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6.7 A20 V19 mOhmsN - Channel 500 mV- 55 C+ 150 C890 mWSmd/SmtTSSOP - 8LReelSi2 Channel12 V5.2 nC , 5.2 nCEnhancement  
DMN2015UFDF-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 1950
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AUD 0.2315
Multiples of: 1

11.6 A20 V6.8 mOhmsN - Channel 400 mV- 55 C+ 150 C1.8 W U - DFN2020 - 6 Si1 Channel4.5 V19.3 nCEnhancement  
IRFR9120NTRPBF-JSM


TO-252 MOSFETs ROHS
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JSMSEMI 1950
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AUD 0.3637
Multiples of: 1

                   
HUF75329D3ST


MOSFET 20a 55V N-Channel UltraFET
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ON Semiconductor 1950
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AUD 0.7963
Multiples of: 1

20 A55 V26 mOhmsN - Channel  - 55 C+ 175 C128 WSmd/SmtTO - 252AAReelSi1 Channel20 V Enhancement  
FDN340P


SOT-23 MOSFETs ROHS
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SLKORMICRO 1949
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AUD 0.0133
Multiples of: 10

                   
IPD50N06S409ATMA2


60V 50A 9mO@50A,10V 71W N Channel TO-252-3-11 MOSFETs ROHS
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Infineon 1944
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AUD 0.942
Multiples of: 1

   N - Channel     Smd/SmtTO - 252 - 3Cut TapeSi1 Channel   Aec - Q101 
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