MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PSMN0R9-25YLDX


MOSFET PSMN0R9-25YLD/LFPAK/REEL 7" Q1
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Nexperia 2682
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AUD 1.0934
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300 A25 V720 uOhmsN - Channel 1.2 V- 55 C+ 175 C238 WSmd/SmtLFPAK56 - 5ReelSi1 Channel20 V89.8 nCEnhancement  
DI115N06PQ


MOSFETs
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Diotec 2681
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AUD 1.0491
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IPTC044N15NM5ATMA1


MOSFETs N
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Infineon 2681
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AUD 4.203
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174 A150 V4.4 mOhmsN - Channel 3 V- 55 C+ 175 C300 WSMD/SMTHDSOP - 16Reel , Cut TapeSi1 Channel- 20 V , 20 V71 nCEnhancement  
FDD770N15A


Fairchild Semiconductor MOSFET 150V18V N Channel PowerTrench MOSFET
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ON Semiconductor 2680
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AUD 0.4445
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18 A150 V61 mOhmsN - Channel 2 v to 4 V- 55 C+ 150 C56.8 WSmd/SmtDPAK - 3ReelSi1 Channel20 V8.4 nC  Powertrench
STP180N10F3


MOSFET N-Ch 100V 3.9 mOhm 180A STripFET
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STMicroelectronics 2680
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AUD 4.1209
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120 A100 V4.5 mOhmsN - Channel 4 V  315 WThrough HoleTO - 220TubeSi1 Channel20 V114.6 nC  Stripfet
HSCE2631


20V 50A 3.6mΩ@4.5V,20A 83W 500mV@250uA 331pF@10V P Channel 4.4nF@10V 76nC@4.5V -55℃~+150℃@(Tj) DFN(3.3x3.3) MOSFETs ROHS
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HUASHUO 2679
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AUD 0.5275
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RF4E100AJTCR


MOSFET Nch 30V 10A Si MOSFET
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ROHM 2679
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AUD 0.5484
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10 A30 V9.4 mOhmsN - Channel 500 mV- 55 C+ 150 C2 WSmd/SmtHuml2020l - 8Cut TapeSi1 Channel12 V13 nCEnhancement  
SI8812DB-T2-E1


Vishay Semiconductors MOSFET 20V 3.2A 0.9W 0.059ohms 4.5V
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Vishay 2678
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AUD 0.2348
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3.2 A20 V590 mOhmsN - Channel8 V1 V- 55 C+ 150 C900 mWSmd/SmtMICRO - FOOT - 4ReelSi  6.3 nC  Micro Foot
AOSP21321


Transistor: P-MOSFET; unipolar; -30V; -8.5A; 2W; SO8
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Alpha & Omega 2678
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AUD 0.3009
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STL42N65M5


MOSFET N-Ch 650V 0.070Ohm 34A Mdmesh M5
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STMicroelectronics 2678
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AUD 14.2166
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34 A650 V79 mOhmsN - Channel 4 V- 55 C+ 150 C208 WSmd/SmtPowerflat - 8Reel 1 Channel25 V100 nC   
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