MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
KY2301H


SOT-23 MOSFETs ROHS
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Kang Yang 2716
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AUD 0.0256
Multiples of: 20

                   
SI2302


SOT-23 MOSFETs ROHS
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PAKER Microelectronics 2716
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AUD 0.0258
Multiples of: 20

                   
G3415LL


SOT-23-6 MOSFETs ROHS
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GOFORD 2716
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AUD 0.0339
Multiples of: 20

                   
KRLML6401


12V 4.3A 50m@4.5V,4.3A 1.3W 950mV@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
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KEXIN 2716
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AUD 0.0345
Multiples of: 20

                   
SP40N16TS


SOT-23-6L MOSFETs ROHS
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Siliup 2716
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AUD 0.0373
Multiples of: 10

                   
EM6K6T2R


MOSFET Small Signal Dual N-CH 20V .3A .15W
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ROHM 2716
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AUD 0.1102
Multiples of: 5

300 mA20 V1 OhmsN - Channel8 V300 mV- 55 C+ 150 C150 mWSmd/SmtEMT - 6ReelSi2 Channel4 V Enhancement  
DMN10H170SVTQ-7


MOSFET 100V N-Ch Enh FET 160mOhm 10Vgs 2.6A
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Diodes Incorporated 2716
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AUD 0.3201
Multiples of: 1

2.6 A100 V115 mOhmsN - Channel 1 V- 55 C+ 150 C1.2 WSmd/SmtTSOT - 26 - 6Cut TapeSi1 Channel20 V9.7 nCEnhancementAec - Q101 
HSCE1218


DFN-8(3.3x3.3) MOSFETs ROHS
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HUASHUO 2716
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AUD 0.3204
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NP3404AMR-G


SOT-23-3L MOSFETs ROHS
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NATLINEAR 2095
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AUD 0.0496
Multiples of: 10

                   
SI2333DDS-T1-GE3-MS


12V 5.5A 1.56W 25mΩ@4.5V,4A 1V@250uA P Channel SOT-23 MOSFETs ROHS
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MSKSEMI 77
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AUD 0.1003
Multiples of: 5

                   
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