MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTMFS5C670NLT3G


MOSFET NFET SO8FL 40V 68A 6.7M
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ON Semiconductor 2716
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AUD 0.4234
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71 A60 V8.8 mOhmsN - Channel 1.2 V- 55 C+ 175 C61 WSmd/SmtDFN - 5ReelSi1 Channel+/- 20 V20 nCEnhancement  
IRFU5305PBF


Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK
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Infineon 2716
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AUD 0.4942
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   P - Channel  - 55 C+ 175 C Through HoleIPAK - 3Tube       
SQJ122ELP-T1_GE3


MOSFETs N-CHANNEL 30-V (D-S) 175C MOSFET
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Vishay 2716
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AUD 0.5434
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101 A30 V3.25 mOhmsN - Channel 2 V- 55 C+ 175 C60 WSMD/SMTSO - 8L Si1 Channel- 20 V , + 20 V33 nC   
SIHD6N80AET4-GE3


MOSFETs N-CHANNEL 800V
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Vishay 2716
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AUD 0.8537
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            Si      
STL11N65M5


STMicroelectronics MOSFET
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STMicroelectronics 2716
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AUD 1.7701
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8.5 A650 V530 mOhmsN - Channel25 V4 V- 55 C+ 150 C70 WSmd/SmtPowerflat - 12Cut TapeSi1 Channel25 V17 nCEnhancement Mdmesh
SI7192DP-T1-GE3


MOSFET 30V 60A 104W 1.9mohm @ 10V
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Vishay 2716
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AUD 3.3787
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   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8ReelSi     Trenchfet
NTLUS3A90PZTBG


MOSFET POWER MOSFET 20V 3A 60 MO
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ON Semiconductor 2715
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AUD 0.3942
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           Cut Tape       
NCEP40T13GU


MOSFET N Trench 40V 130A (Tc) 2.2V @ 250uA 2.3 mΩ @ 65A,10V DFN 5x6-8L RoHS
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NCE Power 2632
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AUD 0.4443
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RD3L04BBKHRBTL


MOSFETs Nch 60V 40A, TO-252 (DPAK), Power MOSFET for Automotive
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ROHM 1057
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AUD 0.8422
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40 A60 V13.5 mOhmsN - Channel 2.5 V- 55 C+ 175 C53 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V13 nCEnhancement  
Hot FCP16N60N


MOSFET SupreMOS 16A
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ON Semiconductor 387
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AUD 5.5037
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16 A600 V170 mOhmsN - Channel  - 55 C+ 150 C134.4 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V Enhancement Supremos
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