MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
JY3401X


30V 4.2A 60m 1.2V 1PCSPChannel SOT-23 MOSFETs ROHS
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Shenzhen JingYang 3957
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AUD 0.0328
Multiples of: 20

                   
SISS26LDN-T1-BE3


MOSFETs N-CHANNEL 60-V (D-S) MOSFET
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Vishay 2708
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AUD 0.701
Multiples of: 1

81.2 A60 V4.3 mOhmsN - Channel 2.5 V- 55 C+ 150 C4.8 WSMD/SMT1212 - 8S Si1 Channel- 20 V , + 20 V15.2 nC   
RF9L120BJFRATCR


MOSFETs Pch -60V -12A, DFN2020Y7LSAA, Power MOSFET for Automotive AEC-Q101
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ROHM 2707
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AUD 0.6551
Multiples of: 1

 60 V106 mOhmsP - Channel 2.5 V- 55 C+ 150 C23 WSMD/SMTDFN - 6Reel , Cut TapeSi1 Channel- 20 V , + 5 V15.7 nCEnhancement  
IPD60R380C6ATMA1


Infineon Technologies MOSFET N-Ch 600V 10.6A DPAK-2
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Infineon 2706
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AUD 1.0048
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10.6 A600 V340 mOhmsN - Channel 2.5 V- 55 C+ 150 C83 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V32 nCEnhancement Coolmos
AO8814


MOSFET 2 N Channel（Double）Common Drain 20V 7.5A 1V @ 250uA 16 mΩ @ 7.5A,10V TSSOP-8 RoHS
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Alpha & Omega 2705
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AUD 0.6343
Multiples of: 1

7.5 A  N    1.5 WSurface Mount      Enhancement  
STL8P4LLF6


MOSFET P-channel 40 V, 0.0175 Ohm typ., 8 A STripFET F6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package
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STMicroelectronics 2705
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AUD 0.7668
Multiples of: 1

8 A40 V20.5 mOhmsP - Channel 1 v to 2.5 V- 55 C+ 150 C2.9 WSmd/SmtPowerflat - 8Cut Tape-1 Channel+/- 20 V22 nCEnhancement Stripfet
DMP3010LPS-13


Diodes Incorporated MOSFET P-CH -30V VBR 1KV 2.18W PD Min RDS
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Diodes Incorporated 2703
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AUD 0.4108
Multiples of: 1

- 36 A- 30 V7.5 mOhmsP - Channel20 V- 2.1 V- 55 C+ 150 C2.18 WSmd/SmtPowerdi5060 - 8ReelSi1 Channel20 V126.2 nCEnhancement  
DMN6069SFG-7


MOSFET 60V N-Ch Enh FET 60Vgss 25A Idm
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Diodes Incorporated 2702
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AUD 0.3448
Multiples of: 1

18 A60 V63 mOhmsN - Channel 1 V- 55 C+ 150 C930 mWSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel20 V14 nCEnhancement  
SSM3J374R,LF


MOSFET P-CH VDSS:-30V VGSS:-20+10V I
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Toshiba 2701
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AUD 0.1606
Multiples of: 5

4 A30 V71 mOhmsP - Channel - 2 V + 150 C2 WSmd/SmtSOT - 23F - 3Cut TapeSi1 Channel- 20 v , 10 V5.9 nCEnhancement U - Mosvi
AO4813


30V 8.3A 2.5W 21mO@10V,7.3A 2 P-Channel SO-8 MOSFETs ROHS
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VBsemi Elec 1847
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AUD 0.4292
Multiples of: 1

                   
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