MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO4403


Transistor: P-MOSFET; unipolar; -30V; -5A; 2W; SO8
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Alpha & Omega 2628
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AUD 0.5663
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SQ7415CENW-T1_BE3


MOSFETs P-CHANNEL 60-V (D-S) 175C MOSFET
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Vishay 2625
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AUD 0.4958
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SH8MA2GZETB


MOSFET 30V NCH+PCH POWER
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ROHM 2625
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AUD 0.471
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4.5 A30 V80 mOhms , 82 mOhmsN - Channel, P - Channel 1 V- 55 C+ 150 C2.7 WSmd/SmtSOP - 8Cut TapeSi2 Channel20 V3 nC , 6.7 nCEnhancement  
HSBA0715


150V 90A 7.95mΩ@10V,30A 187W 4V@250uA N Channel PRPAK(5x6) MOSFETs ROHS
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HUASHUO 2624
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AUD 1.7862
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TPM60V2PS3


SOT-23 MOSFETs ROHS
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TECH PUBLIC 2623
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AUD 0.1543
Multiples of: 5

                   
RD3P06BBKHRBTL


MOSFETs Nch 100V 59A, TO-252 (DPAK), Power MOSFET for Automotive
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ROHM 2623
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AUD 1.1345
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59 A100 V15.8 mOhmsN - Channel 2.5 V- 55 C+ 175 C76 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel 17.3 nCEnhancement  
IRF2907ZPBF


Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; TO220AB
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Infineon 2623
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AUD 2.6601
Multiples of: 2705

170 A75 V4.5 mOhmsN - Channel    330 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V180 nC   
WM02N70ME


Transistor: N-MOSFET; unipolar; SOT23
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Wayon 2622
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AUD 0.0669
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TP65H150G4LSG


MOSFET GAN FET 650V 13A TO220
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Transphorm 2622
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AUD 4.6346
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13 A650 V180 mOhmsN - Channel 4.8 V- 55 C+ 150 C52 WSMD/SMT8X8 PQFN Si1 Channel- 20 V , + 20 V8 nCEnhancement  
NX3008CBKS,115


NXP Semiconductors MOSFET 3030V, 350200 MA NP-CH TRENCH MOSFET
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Nexperia 2621
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AUD 0.087
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350 mA , - 200 mA30 V1.4 OhmsN - Channel, P - Channel - 0.9 v , 0.9 V- 55 C+ 150 C990 mWSmd/SmtSC - 88 - 6ReelSi2 Channel 0.52 nCEnhancement  
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