MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
MCH5839-TL-W


MOSFET PCH+SBD 1.8V DRIVE S
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ON Semiconductor 2695
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AUD 0.2061
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- 1.5 A- 20 V645 mOhmsP - Channel, Sbd - 1.4 V- 55 C+ 150 C800 mWSmd/SmtSC - 88AFL - 5ReelSi1 Channel+/- 10 V1.7 nCEnhancement  
NVMFWS4D0N04XMT1G


MOSFETs 40V T10M IN SO8FL PACKAGE
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ON Semiconductor 2694
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AUD 0.7027
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80 A40 V3.9 mOhmsN - Channel 3.5 V- 55 C+ 175 C43 WSMD/SMTDFNW - 5Reel , Cut TapeSi1 Channel+ 20 V12 nCEnhancement  
BSZ22DN20NS3 G


Infineon Technologies MOSFET N-Ch 200V 7A TDSON-8 OptiMOS 3
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Infineon 2692
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AUD 0.6649
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7 A200 V194 mOhmsN - Channel 2 V- 55 C+ 150 C34 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V5.6 nCEnhancement  
SSM6L40TU(TE85L,F)


Toshiba MOSFET N-Ch FET 30V 1.6A 1V 500mW
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Toshiba 2691
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AUD 0.1543
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1.6 A , - 1.4 A30 V122 mOhmsn - channel, p - channel    500 mWsmd/smtUF - 6Reelsi2 channel     
DMT6009LPS-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 2691
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AUD 0.8214
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         Smd/SmtPowerdi5060 - 8Cut TapeSi      
SI7104DN-T1-E3


MOSFET 12V 35A
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Vishay 2691
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AUD 1.4366
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26.1 A12 V3.7 mOhmsN - Channel  - 55 C+ 150 C3.8 WSmd/SmtPOWERPAK - 1212 - 8Reel 1 Channel12 V Enhancement Trenchfet/Powerpak
IPB60R180C7ATMA1


Transistor: N-MOSFET; unipolar; 600V; 8A; 68W; D2PAK
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Infineon 2690
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AUD 1.8224
Multiples of: 1

            Coolmos C7      
DMN10H170SFDE-7


MOSFET BVDSS: 61V~100V U-DFN2020-6 T&R 3K
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Diodes Incorporated 2689
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AUD 0.2709
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   N - Channel     Smd/SmtU - DFN2020 - E - 6Cut TapeSi1 Channel     
NTR1P02T1G


MOSFET -20V -1A P-Channel
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ON Semiconductor 2667
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AUD 0.1005
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   P - Channel  - 55 C+ 150 C Smd/SmtSOT - 23Reel       
AP4407


30V 12A 10mΩ@10V,10A 3W P Channel SOIC-8 MOSFETs ROHS
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Quan Li 455
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AUD 0.2087
Multiples of: 5

                   
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