MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP3018SFVQ-13


Trans MOSFET P-CH 30V 35A 8-Pin PowerDI T/R
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Diodes Incorporated 2688
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AUD 0.3136
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35 A30 V12 mOhmsP - Channel 3 V- 55 C+ 150 C30 WSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel25 V51 nCEnhancementAec - Q101 
DMN10H120SFG-7


Trans MOSFET N-CH 100V 3.4A Automotive 8-Pin PowerDI EP T/R
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Diodes Incorporated 2688
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AUD 0.4006
Multiples of: 1

   N - Channel     Smd/SmtPowerdi3333 - 8Tape And ReelSi1 Channel  Enhancement  
DMP1045U-GK


SOT-23 MOSFETs ROHS
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GOODWORK 2686
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AUD 0.0383
Multiples of: 10

                   
YJS4409B


SOP-8 MOSFETs ROHS
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Yangjie 2686
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AUD 0.3663
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AP9565BGH


40V 17A 52mO@10V,8A 25W P Channel TO-252-2 MOSFETs ROHS
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APEC 2686
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AUD 0.3863
Multiples of: 5

                   
IRFR210TRLPBF


N-Channel 200 V 2.6A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak
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Vishay 2686
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AUD 0.6933
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   N - Channel  - 55 C+ 150 C Smd/SmtDPAKReelSi      
SQS178ELNW-T1_GE3


MOSFETs SQS178ELNW
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Vishay 2685
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AUD 0.6124
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54 A72 V9.5 mOhmsN - Channel 2.5 V- 55 C+ 175 C65 WSMD/SMTPOWERPAK 1212 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V26 nCEnhancement  
PJT7600_R1_00001


MOSFET N & P Trench 20V 1A,700mA 1V @ 250uA 400 mΩ @ 300mA,1.8V;600 mΩ @ 500mA,1.8V SOT-363 RoHS
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Panjit 2682
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AUD 0.0941
Multiples of: 5

                   
HSBB3214


MOSFET 2 N Channel(Double) -30V 33A 2.5V @ 250uA 12mΩ @ 15A,10V PRPAK3*3 RoHS
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HUASHUO 2682
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AUD 0.1104
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DMTH8012LK3-13


MOSFET N-Ch Enh Mode FET 80V 20Vgss 80A
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Diodes Incorporated 2521
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AUD 0.7487
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50 A80 V12.1 mOhmsN - Channel 1 V- 55 C+ 175 C2.6 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 20 V34 nCEnhancement  
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