MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF7416TRPBF-HXY


30V 9A 20mΩ@10V 3V P Channel SOP-8 MOSFETs ROHS
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HXY MOS 2604
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AUD 0.1457
Multiples of: 5

                   
AP60P20Q


20V 60A 5.8mΩ@4.5V,20A 80W P Channel DFN-8(3.3x3.3) MOSFETs ROHS
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Quan Li 2604
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AUD 0.3421
Multiples of: 5

                   
RQ3L120BJFRATCB


MOSFETs Pch -60V -12A, HSMT8AG, Power MOSFET for Automotive
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ROHM 2604
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AUD 0.6682
Multiples of: 1

12 A60 V106 mOhmsP - Channel 2.5 V- 55 C+ 150 C40 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 5 V15.7 nCEnhancement  
SIS488DN-T1-GE3


Vishay Semiconductors MOSFET 40V 5.5mOhm10V 40A N-CH
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Vishay 2604
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AUD 0.7127
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40 A40 V5.5 mOhmsn - channel 1.1 V- 55 C+ 150 C52 Wsmd/smtPOWERPAK - 1212 - 8Reel-1 channel20 V21.3 nCenhancement trenchfet
RF4E060AJTCR


MOSFET NCH 30V 6A MIDDLE POWER
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ROHM 2603
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AUD 0.3448
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6 A30 V37 mOhmsN - Channel 500 mV- 55 C+ 150 C2 WSmd/SmtHuml2020l - 8Cut TapeSi1 Channel12 V4 nCEnhancement  
AONS32304


Transistor: N-MOSFET; unipolar; 30V; 40A; 6.2W; DFN8
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Alpha & Omega 2603
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AUD 0.8985
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PMDPB30XN,115


Mosfet Array 2 N-Channel (Dual) 20V 4A 490mW Surface Mount 6-HUSON (2x2)
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Nexperia 2601
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AUD 0.3994
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5.3 A20 V30 mOhmsN - Channel 0.65 V- 55 C+ 150 C8.33 WSmd/SmtDFN2020 - 6ReelSi2 Channel 14.4 nCEnhancement  
IPW60R040C7XKSA1


Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-3
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Infineon 2601
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AUD 10.491
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            Coolmos C7      
TT8J11TCR


ROHM Semiconductor MOSFET
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ROHM 2600
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AUD 0.3169
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3.5 A12 V31 mOhmsP - Channel 1 V- 55 C+ 150 C1.25 WSmd/SmtTSST - 8ReelSi2 Channel8 V22 nCEnhancement  
SIA414DJ-T1-GE3


MOSFET 8.0V 12A 19W 11mohm @ 4.5V
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Vishay 2600
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AUD 1.0746
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SC - 70 - 6LReel       
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