MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RH7G04BBKFRATCB


MOSFETs DFN8 P CHAN 30V
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ROHM 2614
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AUD 1.1082
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40 A40 V3.1 mOhmsN - Channel 2.5 V- 55 C+ 175 C75 WSMD/SMTDFN - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V7.6 nCEnhancementAEC - Q101 
TSM500N15CS RLG


MOSFET 150V, 11A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 2614
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AUD 2.3846
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4 A , 11 A150 V50 mOhmsN - Channel 4 V- 55 C+ 150 C12.7 WSMD/SMTSOP - 8Reel , Cut Tape 1 Channel- 20 V , + 20 V20.5 nCEnhancement  
SI9407BDY-E3


Transistor: P-MOSFET; unipolar; -60V; -4A; 5W; SO8
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Vishay 2613
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AUD 0.8024
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PJD45N15S-AU_L2_006A1


MOSFETs 150V N-Channel Enhancement Mode MOSFET
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Panjit 2610
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AUD 1.5581
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40 A150 V25 mOhmsN - Channel 4 V- 55 C+ 175 C100 WSMD/SMTTO - 252AA - 2Reel , Cut TapeSi1 Channel- 20 V , + 20 V36 nCEnhancementAEC - Q101 
WNM3019-3/TR


SOT-523 MOSFETs ROHS
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Will Semiconductor 2609
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AUD 0.0496
Multiples of: 10

                   
HKTD90N03


TO-252 MOSFETs ROHS
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Hottech 2609
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AUD 0.1384
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WNM01N11-6/TR


SOT-23-6L MOSFETs ROHS
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Will Semiconductor 2609
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AUD 0.2452
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VN10KN3-G


Transistor: N-MOSFET; unipolar; 60V; 0.75A; 1W; TO92
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Microchip 2609
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AUD 0.8289
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310 mA60 V5 OhmsN - Channel 800 mV- 55 C+ 150 C1 WThrough HoleTO - 92BulkSi1 Channel10 V Enhancement  
BUK9M11-40EX


MOSFET BUK9M11-40E/MLFPAK/REEL 7" Q1/
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Nexperia 2608
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AUD 0.3218
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53 A40 V7.5 mOhmsN - Channel 1.4 V- 55 C+ 175 C62 WSmd/SmtLFPAK33 - 5Cut TapeSi1 Channel10 V13.4 nCEnhancement  
IPB80N08S2L-07


Infineon Technologies MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS
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Infineon 2606
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AUD 3.8582
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80 A75 V4.8 mOhmsn - channel 1.2 V- 55 C+ 175 C300 Wsmd/smtTO - 263 - 3-si1 channel20 V233 nCenhancementaec - q101optimos
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