MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPP044N03LF2SAKSA1


MOSFETs TRENCH <= 40V
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Infineon 2852
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AUD 0.5418
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53 A30 V4.35 mOhmsN - Channel 2.35 V- 55 C+ 175 C75 WThrough Hole TubeSi1 Channel- 20 V , + 20 V27 nCEnhancement StrongIRFET
IRFR014TRPBF


N-Channel 60 V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak
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Vishay 2721
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AUD 0.5582
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   N - Channel  - 55 C+ 150 C Smd/SmtDPAKReelSi      
SIHP15N60E-E3


MOSFET 600V 280mOhm@10V 15A N-Ch E-SRS
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Vishay 2721
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AUD 2.1672
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15 A600 V280 mOhmsN - Channel 4 V- 55 C+ 150 C180 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V39 nCEnhancement  
PT8810


MOSFET 2 N Channel（Double）Common Drain 20V 7A 1V @ 250uA 22 mΩ @ 6A,4.5V TSSOP8 RoHS
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PUOLOP 2720
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AUD 0.1088
Multiples of: 5

                   
Hot IRFBF20PBF


N-Channel 900 V 1.7A (Tc) 54W (Tc) Through Hole TO-220AB
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Vishay 2720
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AUD 1.4218
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           TubeSi      
IAUA200N04S5N010AUMA1


MOSFET MOSFET_(20V 40V)
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Infineon 2720
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AUD 1.7567
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           Cut Tape       
IXTP32P20T


MOSFET TenchP Power MOSFET
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IXYS 2720
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AUD 7.3224
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32 A200 V130 mOhmsP - Channel     Through HoleTO - 220 - 3TubeSi1 Channel     
CMLDM7002AG TR


Central Semiconductor MOSFET Dual N-Channel Enh Mode
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Central Semiconductor 2718
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AUD 0.5122
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280 mA60 V2 OhmsN - Channel  - 65 C+ 150 C350 mWSmd/SmtSOT - 563 - 6ReelSi2 Channel40 V592 pCEnhancement Cmldm7
BSS123


SOT-23 MOSFETs ROHS
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Hong Kong Chuangji 2716
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AUD 0.0137
Multiples of: 50

                   
CSD15380F3


MOSFET 20-V, N channel NexFET power MOSFET, single LGA 0.6 mm x 0.7 mm, 1460 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
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Texas Instruments 2711
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AUD 0.0937
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0.5 A20 V2220 mOhmsN - channel 1.1 V- 55 C+ 150 C500 mWSmd/smtQFN - 3ReelSi1_Channel10 V0.216 nCEnhancement Picostar
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