MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFU4510PBF


MOSFET 100V 64A 14.5mOhm HEXFET 140W 50nC
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Infineon 5067
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AUD 1.2724
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63 A100 V13.9 mOhmsN - Channel    143 WThrough HoleIPAKTubeSi 20 V14 nC  Strongirfet
BSC265N10LSF G


Infineon Technologies MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
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Infineon 2732
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AUD 0.7849
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6.5 A100 V26.5 mOhmsN - Channel 1.2 V- 55 C+ 150 C78 WSmd/SmtTDSON - 8ReelSi1 Channel20 V21 nCEnhancement Optimos
DMP22D4UFA-7B


Diodes Incorporated MOSFET MOSFET BVDSS: 8V-24V X2-DFN0806-3 T&R 10K
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Diodes Incorporated 2730
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AUD 0.0181
Multiples of: 5

330 mA20 V5 OhmsP - Channel - 1 V- 55 C+ 150 C400 mWSmd/SmtX2 - DFN0806 - 3ReelSi1 Channel8 V0.4 nCEnhancement  
CJK3400A


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 32 mO @ 5.8A,10V SOT-23-3L RoHS
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Changjing Electronics Technology 2730
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AUD 0.0762
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BUK9M11-40EX


MOSFET BUK9M11-40E/MLFPAK/REEL 7" Q1/
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Nexperia 2730
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AUD 0.3694
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53 A40 V7.5 mOhmsN - Channel 1.4 V- 55 C+ 175 C62 WSmd/SmtLFPAK33 - 5Cut TapeSi1 Channel10 V13.4 nCEnhancement  
IPN80R1K2P7ATMA1


Transistor: N-MOSFET; unipolar; 800V; 3.1A; 6.8W; PG-SOT223
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Infineon 2730
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AUD 0.5352
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4.5 A800 V1 OhmsN - Channel 3 V- 55 C+ 150 C6.8 WSMD/SMTSOT - 223 - 3Cut Tape , ReelSi1 Channel- 30 V , + 30 V11 nCEnhancement  
PJQ5439E-AU_R2_006A1


MOSFETs 30V P-Channel Enhancement Mode MOSFET
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Panjit 2729
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AUD 0.4219
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33 A30 V18.8 mOhmsP - Channel 2.5 V- 55 C+ 175 C33 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 25 V , + 25 V22 nCEnhancementAEC - Q101 
MMFTN170


Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.3W; SOT23
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Diotec 2727
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AUD 0.071
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RTQ025P02TR


ROHM Semiconductor MOSFET P-CH 20V 2.5A TSMT6
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ROHM 2727
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AUD 0.3789
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2.5 A- 20 V72 mOhmsP - Channel  - 55 C+ 150 C1.25 WSmd/SmtT SMT - 6ReelSi1 Channel12 V Enhancement  
NTD4856NT4G


Trans MOSFET N-CH 25V 16.8A 3-Pin(2+Tab) DPAK T/R
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ON Semiconductor 2727
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AUD 0.4203
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