MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TDM2472


PPAK-8L(3x3) MOSFETs ROHS
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Techcode 2672
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AUD 0.2376
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SSM6J511NU,LF(T


Transistor: P-MOSFET; unipolar; -12V; -14A; 1.25W; uDFN6
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Toshiba 2672
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AUD 0.3072
Multiples of: 1

                   
TDM3458


MOSFET N Trench 30V 60A (Tc) 2.5V @ 250uA 5.5 mΩ @ 15A,10V DFN-8_5x6mm RoHS
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Techcode 2672
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AUD 0.3576
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FDMC3612


MOSFET 100V PowerTrench MOSFET
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ON Semiconductor 2672
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AUD 0.5352
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16 A100 V122 mOhmsN - Channel 4 V- 55 C+ 150 C35 WSmd/SmtMLP 3.3 x 3.3ReelSi1 Channel20 V14.4 nC   
VN2222LL-G


Transistor: N-MOSFET; unipolar; 60V; 0.75A; TO92
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Microchip 2672
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AUD 0.7388
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230 mA60 V7.5 OhmsN - Channel 600 mV- 55 C+ 150 C1 WThrough HoleTO - 92BulkSi1 Channel10 V Enhancement  
SI7104DN-T1-E3


MOSFET 12V 35A
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Vishay 2672
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AUD 1.4366
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35 A12 V3.7 mOhmsN - Channel 1.8 V- 55 C+ 150 C52 WSMD/SMTPOWERPAK - 1212 - 8Reel , Cut TapeSi1 Channel- 12 V , 12 V46 nCEnhancement TrenchFET
IXFH16N50P


500V 16A 300W 400mO@8A,10V null TO-247-3 MOSFETs ROHS
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IXYS 2672
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AUD 5.5657
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16 A500 V400 mOhmsn - channel  - 55 C+ 150 C300 Wthrough holeTO - 247 - 3Tubesi1 channel30 V enhancement hyperfet
Hot BSC014N04LS


Infineon Technologies MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
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Infineon 2671
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AUD 0.7602
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100 A40 V1.4 mOhmsN - Channel20 V1.2 V- 55 C+ 150 C96 WSmd/SmtDSON - 8ReelSi1 Channel20 V61 nCEnhancement  
WM02P56M3


Transistor: P-MOSFET; unipolar; SOT23-6
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Wayon 2669
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AUD 0.1087
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BUK9M53-60EX


MOSFET BUK9M53-60E/MLFPAK/REEL 7" Q1/
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Nexperia 2668
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AUD 0.2807
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17 A60 V43 mOhmsN - Channel 1.4 V- 55 C+ 175 C36 WSmd/SmtLFPAK33 - 5Cut TapeSi1 Channel10 V6 nCEnhancement  
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