MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFRC20TRLPBF


N-Channel 600 V 2A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
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Vishay 6995
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AUD 0.9161
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   N - Channel  - 55 C+ 150 C Smd/SmtDPAKReelSi      
SQJ146EP-T1_JE3


MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET
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Vishay 2745
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AUD 0.4778
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75 A40 V7 mOhmsN - Channel 3.5 V- 55 C+ 175 C75 WSMD/SMTPOWERPAK SO - 8LReel , Cut TapeSi1 Channel- 10 V , + 10 V27 nCEnhancement  
STF6N65K3


MOSFET N-Ch 650V 1.1 Ohm 5.4A SuperMESH3
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STMicroelectronics 2745
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AUD 1.526
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5.4 A650 V1.3 OhmsN - Channel  - 55 C+ 150 C30 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel30 V35 nCEnhancement Supermesh
NTB6410ANT4G


ON Semiconductor MOSFET NFET D2PAK 100V 76A 13MOH
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ON Semiconductor 2745
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AUD 2.2821
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76 A100 V11 mOhmsN - Channel 2 v to 4 V- 55 C+ 175 C188 WSmd/SmtD2PAK - 3ReelSi1 Channel+/- 20 V120 nC   
SI4936CDY-T1-GE3


MOSFET 30V 5.8A 2.3W 40mohm @ 10V
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Vishay 2744
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AUD 0.7104
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   N - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReel       
DMN3350LDW-7


MOSFETs MOSFET BVDSS: 25V~30V SOT363 T and R 3K
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Diodes Incorporated 2741
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AUD 0.0575
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           Reel , Cut TapeSi      
SISA18ADN-T1-GE3


Vishay Semiconductors MOSFET 30V 7.5mOhm10V 18A N-Ch G-IV
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Vishay 2740
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AUD 0.2605
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38.3 A30 V9.6 mOhmsn - channel+ 20 v , - 16 V1.2 V- 55 C+ 150 C19.8 Wsmd/smtPOWERPAK - 1212 - 8Reelsi1 channel20 v , - 16 V14.3 nCenhancement trenchfet
HSBA4204


40V 30A 11.5mΩ@10V,6A 2W 2.5V@250uA 88pF@15V 2 N-Channel 1.314nF@15V 10.7nC@4.5V -55℃~+150℃@(Tj) PRPAK5x6 MOSFETs ROHS
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HUASHUO 2740
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AUD 0.3399
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RQ3E100ATTB


MOSFET PCH -30V -31A POWER
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ROHM 2740
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AUD 0.6
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31 A30 V11.4 mOhmsP - Channel 1 V- 55 C+ 150 C17 WSmd/SmtH SMT - 8Cut TapeSi1 Channel20 V42 nCEnhancement  
WST2004


20V 400mA 240mΩ@4.5V,400mA 150mW N Channel SOT-723 MOSFETs ROHS
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Winsok 2454
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AUD 0.0526
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