MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BUK4D16-20H


MOSFETs MOSFET BUK4D16-20/SOT1220
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Nexperia 2716
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AUD 0.2381
Multiples of: 1

26 A20 V14 mOhmsN - Channel 1.3 V- 55 C+ 175 C19 WSMD/SMTDFN - 2020MD - 6Reel , Cut TapeSi1 Channel- 12 V , + 12 V9.8 nCEnhancement  
FDN8601


Fairchild Semiconductor MOSFET 100V N-Channel PowerTrench MOSFET
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ON Semiconductor 2716
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AUD 0.6037
Multiples of: 1

2.7 A100 V85.4 mOhmsn channel 3 V  1.5 Wsmd/smtSSOT - 3Cut Tapesi1 channel20 V3 nC  powertrench
SIHD6N80AET4-GE3


MOSFETs N-CHANNEL 800V
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Vishay 2716
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AUD 0.8849
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            Si      
PJQ5544V-AU_R2_002A1


MOSFETs 40V N-Channel Enhancement Mode MOSFET
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Panjit 2716
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AUD 0.9473
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120 A40 V3.6 mOhmsN - Channel 3.5 V- 55 C+ 175 C94 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V34 nCEnhancementAEC - Q101 
SI7192DP-T1-GE3


MOSFET 30V 60A 104W 1.9mohm @ 10V
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Vishay 2716
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AUD 2.9011
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   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8ReelSi     Trenchfet
NTLUS3A90PZTBG


MOSFET POWER MOSFET 20V 3A 60 MO
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ON Semiconductor 2715
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AUD 0.3942
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           Cut Tape       
NTMJST1D4N06CLTXG


MOSFETs TRENCH 6 60V LFPAK 5X7
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ON Semiconductor 2713
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AUD 1.5416
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273 A40 V1.49 mOhmsN - Channel 3.5 V- 55 C+ 175 C116 WSMD/SMTTCPAK57 - 10Reel , Cut TapeSi1 Channel- 20 V , + 20 V92.2 nCEnhancement  
AP3020


MOSFET 2 N Channel (Dual) 30V 11.8A 3V @ 250uA 11.5 mΩ @ 11A,10V SO-8 RoHS
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Quan Li 2696
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AUD 0.2881
Multiples of: 5

                   
IRFR9220TRLPBF


Vishay Semiconductors MOSFET P-Chan 200V 3.6 Amp
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Vishay 2423
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AUD 0.3295
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3.6 A- 200 V1.5 OhmsP - Channel20 V - 55 C+ 150 C2.5 WSmd/SmtDPAK - 3ReelSi   Enhancement  
STL11N65M5


STMicroelectronics MOSFET
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STMicroelectronics 0
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AUD 1.08
Multiples of: 3000

8.5 A650 V530 mOhmsN - Channel25 V4 V- 55 C+ 150 C70 WSmd/SmtPowerflat - 12Cut TapeSi1 Channel25 V17 nCEnhancement Mdmesh
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