MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTJS4405NT1G


ON Semiconductor MOSFET 25V 1.2A N-Channel
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ON Semiconductor 14550
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AUD 0.0698
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1.2 A25 V299 mOhmsN - Channel  - 55 C+ 150 C630 mWSmd/SmtSC - 88 - 6ReelSi1 Channel8 V Enhancement  
HSBA20N15S


MOSFET N Channel 150V 23A 2.5V @ 250uA 56mΩ @ 10A,10V PRPAK5*6 RoHS
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HUASHUO 2741
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AUD 0.484
Multiples of: 1

                   
DMN3731UFB4-7B


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 2735
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AUD 0.0552
Multiples of: 10

                   
SP20N14KDNQ


PDFN-6L(2x2) MOSFETs ROHS
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Siliup 2735
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AUD 0.0689
Multiples of: 5

                   
DMP56D0UFB-7


Diodes Incorporated MOSFET P-CH ENHANCEMENT 6Ohm -50V -200mA
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Diodes Incorporated 2735
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AUD 0.0881
Multiples of: 5

- 200 mA- 50 V6 OhmsP - Channel - 1.2 V- 55 C+ 150 C425 mWSmd/SmtX1 - DFN1006 - 3Reel- +/- 8 V580 pCEnhancement  
BSS123W


MOSFET 100V NCH ENHANCEMENT MODE TRANSISTOR
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ON Semiconductor 2735
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AUD 0.1154
Multiples of: 1

170 mA100 V10 OhmsN - Channel 800 mV- 55 C+ 150 C200 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel20 V Enhancement  
RTQ035N03TR


ROHM Semiconductor MOSFET N-CH 30V 3.5A TSMT6
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ROHM 2735
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AUD 0.2271
Multiples of: 5

3.5 A30 V38 mOhmsN - Channel12 V - 55 C+ 150 C1.25 WSmd/SmtT SMT - 6ReelSi1 Channel12 V Enhancement  
NTMJST1D4N06CLTXG


MOSFETs TRENCH 6 60V LFPAK 5X7
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ON Semiconductor 2735
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AUD 1.4448
Multiples of: 1

273 A40 V1.49 mOhmsN - Channel 3.5 V- 55 C+ 175 C116 WSMD/SMTTCPAK57 - 10Reel , Cut TapeSi1 Channel- 20 V , + 20 V92.2 nCEnhancement  
SSM6J215FE(TE85L,F


Toshiba MOSFET P-Ch U-MOS VI FET ID -3.4A -20V 630pF
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Toshiba 2733
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AUD 0.1461
Multiples of: 1

- 3.4 A- 20 V154 mOhmsP - Channel - 0.3 v to - 1 V- 55 C+ 150 C500 mWSmd/SmtSOT - 23 - 6ReelSi1 Channel8 V10.4 nC   
ECH8655R-TL-H


MOSFET SWITCHING DEVICE
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ON Semiconductor 2732
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AUD 0.4515
Multiples of: 1

9 A24 V17 mOhmsN - Channel     Smd/SmtECH - 8Cut TapeSi      
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