MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXFP36N60X3


MOSFET 600V, 36A current capacity, Ultra junction X3, TO-220 package, MOSFET
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IXYS 2740
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AUD 6.0418
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36 A600 V90 mOhmsN - Channel 5 V- 55 C+ 150 C446 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , + 20 V29 nCEnhancement HiPerFET
FDMS7676


Fairchild Semiconductor MOSFET 3020V N-Chan PowerTrench
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ON Semiconductor 2739
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AUD 0.8209
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28 A30 V5.4 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtPOWER - 56 - 8ReelSi1 Channel20 V Enhancement Powertrench
PJQ5594-AU_R2_002A1


MOSFETs 150V N-Channel Enhancement Mode MOSFET
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Panjit 2739
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AUD 0.9769
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25 A150 V49 mOhmsN - Channel 4 V- 55 C+ 175 C79 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V22 nCEnhancementAEC - Q101 
RQ3E180GNTB


ROHM Semiconductor MOSFET 4.5V Drive Nch MOSFET
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ROHM 2738
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AUD 0.3957
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18 A30 V4.3 mOhmsN - Channel 2.5 V- 55 C+ 150 C2 WSmd/SmtH SMT - 8ReelSi1 Channel20 V22.4 nC   
ZVN4206AVSTZ


MOSFET Avalanche
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Diodes Incorporated 2737
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AUD 0.4088
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600 mA60 V1.5 OhmsN - Channel 3 V- 55 C+ 150 C700 mWThrough HoleTO - 92 - 3BulkSi1 Channel20 V Enhancement  
PJD55N04S-AU_L2_002A1


MOSFETs 40V N-Channel Enhancement Mode MOSFET
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Panjit 2737
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AUD 1.0015
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87 A40 V5.3 mOhmsN - Channel 2.3 V- 55 C+ 175 C71 WSMD/SMTTO - 252AA - 2Reel , Cut TapeSi1 Channel- 20 V , + 20 V20 nCEnhancementAEC - Q101 
PSMN9R1-30YL,115


N-Channel 30 V 57A (Tc) 52W (Tc) Surface Mount LFPAK56, Power-SO8
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Nexperia 2736
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AUD 0.3431
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57 A30 V9.1 mOhmsN - Channel 1.3 V- 55 C+ 175 C52 WSmd/SmtLFPAK56 - 4Tape And ReelSi1 Channel10 V8.4 nCEnhancement  
TM2302BI


SOT-23 MOSFETs ROHS
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Tritech-MOS 2735
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AUD 0.028
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20P07


20V 6A 20mΩ 1.4V P Channel SOT23-3L MOSFETs ROHS
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HL 2735
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AUD 0.0447
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SI2306


30V 3.16A 38mΩ@10V,3.5A 750mW 3V@250uA null SOT-23 MOSFETs ROHS
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Juxing Electronic Technology 2716
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AUD 0.0274
Multiples of: 20

                   
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