MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
LMTL5P02


SOT-23 MOSFETs ROHS
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Leiditech 2871
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AUD 0.1703
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NCE8205t


20V 5A 16.5mΩ@4.5V,5A 1.25W 700mV@250uA 2 N-Channel SOT-23-6L MOSFETs ROHS
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NCE Power 2871
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AUD 0.1191
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IRFU5505PBF


Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; IPAK
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Infineon 2871
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AUD 0.7017
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18 A55 V110 mOhmsP - Channel    57 WThrough HoleIPAKTubeSi1 Channel20 V21.3 nC   
BSC12DN20NS3G


Infineon Technologies MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
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Infineon 2871
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AUD 0.8816
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11.3 A200 V108 mOhmsN - Channel 2 V- 55 C+ 150 C50 WSmd/SmtTDSON - 8ReelSi1 Channel20 V8.7 nCEnhancement Optimos
TSG65N195CE RVG


MOSFETs 650V, 11A, PDFN88, E-mode GaN Transistor
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Taiwan Semiconductor 2871
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AUD 7.6672
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11 A650 V195 mOhmsN - Channel 2.6 V- 55 C+ 150 C SMD/SMTPDFN - 8Reel , Cut TapeSi1 Channel- 10 V , + 7 V2.2 nCEnhancement  
BUK7Y18-75B,115


NXP Semiconductors MOSFET N-CHANNEL TRENCHMOS STANDARD LEVEL FET
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Nexperia 2870
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AUD 0.7207
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49 A75 V13.8 mOhmsN - Channel     Smd/SmtLFPAK56 - 5ReelSi1 Channel     
IRFSL7734PBF


International Rectifier MOSFET 75V Single N-Channel HEXFET
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Infineon 2870
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AUD 2.5187
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183 A75 V3.5 mOhmsN - Channel 3.7 V- 55 C+ 175 C290 WThrough HoleTO - 262 - 3TubeSi1 Channel20 V180 nCEnhancement Strongirfet
WSD3028DN


MOSFET N Trench 30V 25A (Tc) 2.5V @ 250uA 25 mΩ @ 12A,10V DFN 3.3x3.3-8 RoHS
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Winsok 2861
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AUD 0.1541
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RH6N040BHTB1


MOSFETs Nch 80V 40A, HSMT8, Power MOSFET
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ROHM 2735
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AUD 1.1969
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65 A80 V8.3 mOhmsN - Channel 4 V- 55 C+ 150 C59 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V23 nCEnhancement  
HSBA6901


60V 42W 2.5V@250uA 1PCSN-Channel&1PCSP-Channel PRPAK-5x6 MOSFETs ROHS
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HUASHUO 2371
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AUD 0.3268
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