MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDS4953


SOP-8 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

TECH PUBLIC 4132
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AUD 0.1473
Multiples of: 5

                   
IRF40B207


Transistor: N-MOSFET; unipolar; 40V; 67A; 83W; TO220AB
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Infineon 2900
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AUD 0.144
Multiples of: 2990

            Hexfet®      
AO6601


Trans MOSFET N/P-CH 30V 3.4A/2.3A 6-Pin TSOP
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Alpha & Omega 2900
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AUD 0.2006
Multiples of: 1

3.4/2.3 A  N/P    1.15 WSurface Mount      Enhancement  
CSD22204W


MOSFET -8V, P channel NexFET power MOSFET, single WLP 1.5 mm x 1.5 mm, 9.9 mOhm, gate ESD protection 9-DSBGA
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Texas Instruments 2900
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AUD 0.2807
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- 5 A- 8 V14 mOhmsP - Channel    1.7 WSmd/SmtBGA - 9ReelSi1 Channel- 6 V   Nexfet
YJG105N03A


30V 105A 2.45mΩ@10V,20A 49W N Channel PDFN(5x6) MOSFETs ROHS
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Yangjie 2900
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AUD 0.2855
Multiples of: 5

                   
SSM6J412TU,LF


MOSFET Small Signal MOSFET P-ch VDSS=-20V VGSS=+-8V ID=-4.0A RDSON=0.0427O @ 4.5V in UF6 package
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Toshiba 2900
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AUD 0.2889
Multiples of: 5

           Cut Tape       
HSCC8211


MOSFET DoubleNChannelCommon Drain -20V 8A 1V @ 250uA 13mΩ @ 2A,4.5V DFN2*3 RoHS
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HUASHUO 2885
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AUD 0.1596
Multiples of: 5

                   
WM10N35M3


Transistor: N-MOSFET; unipolar; SOT23-6
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Wayon 2877
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AUD 0.163
Multiples of: 1

                   
WM02DN70M3


Transistor: N-MOSFET x2; unipolar; SOT23-6; common drain
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Wayon 2861
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AUD 0.1421
Multiples of: 1

                   
IPD068P03L3G(UMW)


TO-252 MOSFETs ROHS
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Youtai 2546
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AUD 0.2891
Multiples of: 5

                   
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