MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFP460LCPBF


MOSFET N Trench 500V 20A (Tc) 4V @ 250uA 270 mΩ @ 12A,10V TO-247 (AC) RoHS
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Infineon 2910
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AUD 3.8544
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IRFR9024TRLPBF


Vishay Semiconductors MOSFET P-Chan 60V 8.8 Amp
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Vishay 2908
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AUD 1.1197
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8.8 A- 60 V280 mOhmsP - Channel20 V - 55 C+ 150 C2.5 WSmd/SmtDPAK - 3ReelSi   Enhancement  
NTMFS2D1N08XT1G


MOSFETs MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.9mohm, 201 A MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.9mohm, 201 A
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ON Semiconductor 2907
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AUD 1.5301
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201 A80 V1.9 mOhmsN - Channel 3.6 V- 55 C+ 175 C164 WSMD/SMTDFN - 5Reel , Cut TapeSi1 Channel- 20 V , + 20 V39 nCEnhancement  
DMP3056LDMQ-7


Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.25W; SOT26
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Diodes Incorporated 2906
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AUD 0.349
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PJQ5526_R2_00201


MOSFETs 30V N-Channel (LL) SGT MOSFET
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Panjit 2906
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AUD 0.3645
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68 A30 V4.9 mOhmsN - Channel 2.5 V- 55 C+ 150 C35.7 WSMD/SMTDFN - 5060X - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V15 nCEnhancement  
PJQ5524_R2_00201


MOSFETs 30V N-Channel (LL) SGT MOSFET
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Panjit 2906
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AUD 0.4252
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85 A30 V3.6 mOhmsN - Channel 2.5 V- 55 C+ 150 C41.7 WSMD/SMTDFN - 5060X - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V21 nCEnhancement  
QS8M13TCR


Mosfet Array N and P-Channel 30V 6A, 5A 1.5W Surface Mount TSMT8
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ROHM 2906
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AUD 0.7519
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6 A , - 5 A30 v , - 30 V28 mOhmsN - Channel, P - Channel     Smd/SmtT SMT - 8ReelSi2 Channel     
SQJ476EP-T1_BE3


MOSFETs N-CHANNEL 100-V (D-S) 175C MOSFET
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Vishay 2885
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AUD 0.4909
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           Reel , Cut TapeSi      
AOSP36326C


Transistor: N-MOSFET; unipolar; 30V; 12A; 2.5W; SO8
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Alpha & Omega 2853
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AUD 0.2507
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WM02DH08D


Transistor: N/P-MOSFET; unipolar; SOT363
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Wayon 278
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AUD 0.069
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