MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HSBB6113


60V 13A 90mΩ@10V,10A 2W 2.5V@250uA 50pF@15V P Channel 1.08nF@15V 11.8nC@4.5V -55℃~+150℃@(Tj) PRPAK3x3 MOSFETs ROHS
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HUASHUO 11649
Ships to you
between Fri. 31 Jul to Wed. 05 Aug
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AUD 0.2617

Multiples of: 5

                   
DMN4008LFG-13


MOSFET 40V N-Ch Enh FET 20Vgs 19.2A 74nC
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Diodes Incorporated 2880
Ships to you
between Thu. 23 Jul to Mon. 27 Jul
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AUD 0.5558

Multiples of: 1

14.4 A40 V7 mOhmsN - Channel 3 V- 55 C+ 150 C1 WSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel20 V34 nCEnhancement  
RF9G120BJFRATCR


MOSFETs Pch -40V -12A, DFN2020Y7LSAA, Power MOSFET for Automotive
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 2880
Ships to you
between Thu. 23 Jul to Mon. 27 Jul
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AUD 0.6567

Multiples of: 1

12 A40 V48 mOhmsP - Channel 2.5 V- 55 C+ 150 C23 WSMD/SMTDFN - 6Reel , Cut TapeSi1 Channel- 20 V , + 5 V15.5 nCEnhancement  
SQS462ENW-T1_GE3


MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET
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Vishay 2880
Ships to you
between Thu. 23 Jul to Mon. 27 Jul
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AUD 0.6584

Multiples of: 1

8 A60 V63 mOhmsN - Channel 2.5 V- 55 C+ 175 C33 WSMD/SMTPOWERPAK 1212 - 8 Si1 Channel- 20 V , + 20 V8 nCEnhancement TrenchFET
NVMYS5D3N04CTWG


MOSFET 40V 5.3Ohm 68A Single N-Channel
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ON Semiconductor 2880
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between Thu. 23 Jul to Mon. 27 Jul
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AUD 0.66

Multiples of: 1

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STL8N6LF6AG


MOSFET Automotive-grade dual N-channel 60 V, 27 mO typ., 20 A STripFET II Power MOSFET in a PowerFLAT 5x6 double island package
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STMicroelectronics 2880
Ships to you
between Fri. 17 Jul to Thu. 23 Jul
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AUD 0.7884

Multiples of: 1

9.6 A60 V43 mOhmsN - Channel 2.5 V- 55 C+ 175 C75 WSmd/SmtPowerflat - 8ReelSi2 Channel-27.3 nCEnhancementAec - Q101Stripfet
DMHC10H170SFJ-13


Diodes Incorporated MOSFET 100V Comp Enh FET 20Vgs w H-Bridge
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Diodes Incorporated 2880
Ships to you
between Thu. 23 Jul to Mon. 27 Jul
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AUD 0.7651

Multiples of: 1

2.9 A , 2.3 A100 V111 mOhms , 191 mOhmsN - Channel, P - Channel 1 V , 3 V- 55 C+ 150 C2.1 WSMD/SMTV - DFN5045 - 12Reel , Cut TapeSi4 Channel- 20 V , 20 V9.7 nC , 17.5 nCEnhancement  
IPG20N10S4L22AATMA1


MOSFET MOSFET_75V 120V
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Infineon 2880
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between Fri. 17 Jul to Thu. 23 Jul
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AUD 0.9104

Multiples of: 1

20 A100 V20 mOhms , 20 mOhmsN - Channel 1.1 V- 55 C+ 175 C60 WSmd/SmtTDSON - 8Cut TapeSi2 Channel16 V27 nC , 27 nCEnhancementAec - Q101 
FDMS007N08LC


MOSFET PTNG 8020V IN 5X6
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ON Semiconductor 2880
Ships to you
between Thu. 23 Jul to Mon. 27 Jul
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AUD 1.7086

Multiples of: 1

 80 V N - Channel     Smd/SmtPQFN - 8Cut TapeSi1 Channel20 V Enhancement  
SIHFU420-GE3


MOSFETs MOSFET N-CHANNEL 500V
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Vishay 2870
Ships to you
between Thu. 23 Jul to Mon. 27 Jul
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AUD 0.5467

Multiples of: 1

         Through HoleTO - 251 - 3 Si      
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