MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RQ6A045APTCR


MOSFET PCH -12V -4.5A SMALL SIGNAL
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ROHM 2905
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AUD 0.3761
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4.5 A30 V80 mOhmsN - Channel 1 V- 55 C+ 150 C2.7 WSmd/SmtSOP - 8Cut TapeSi2 Channel20 V3 nCEnhancement  
SIRA12DP-T1-GE3


MOSFET 30V 4.3mOhm@10V 25A N-Ch G-IV
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Vishay 2905
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AUD 0.6046
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   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8Reel       
WM01P41M


Transistor: P-MOSFET; unipolar; SOT23
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Wayon 2905
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AUD 0.0627
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P40B10SN-5071


Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W
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Shindengen 2903
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AUD 1.0239
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            EETMOS3      
IQD005N04NM6SCATMA1


MOSFETs TRENCH <= 40V
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Infineon 2903
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AUD 2.8075
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597 A40 V490 uOhmsN - Channel 2.8 V- 55 C+ 175 C333 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V130 nCEnhancement OptiMOS
R6030KNXC7G


MOSFET 600V POWER MOSFET
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ROHM 2903
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AUD 6
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30 A600 V130 mOhmsN - Channel 5 V- 55 C+ 150 C86 WThrough HoleTO - 220FM - 3TubeSi1 Channel- 20 V , + 20 V , - 30 V , + 30 V56 nCEnhancement  
STD4NK80Z-1


STMicroelectronics MOSFET N-Ch, 800V-3ohms Zener SuperMESH 3A
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STMicroelectronics 2902
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AUD 1.1467
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3 A800 V3.5 OhmsN - Channel  - 55 C+ 150 C80 WThrough HoleIPAK - 3Tube  30 V22.5 nCEnhancement  
SI7862ADP-T1-E3


MOSFET 16V 29A 5.4W 3.0mohm 4.5V
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Vishay 2902
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AUD 4.1154
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18 A16 V3 mOhmsN - Channel8 V - 55 C+ 150 C1.9 WSmd/SmtSO - 8Reel    Enhancement  
IPP018N03LF2SAKSA1


MOSFETs TRENCH <= 40V
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Infineon 2724
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AUD 0.9293
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128 A30 V1.8 mOhmsN - Channel 2.35 V- 55 C+ 175 C167 WThrough Hole TubeSi1 Channel- 20 V , + 20 V95 nCEnhancement StrongIRFET
RQ3E180AJTB


MOSFET MOSFET for switching application that features Low on-resistance
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ROHM 43
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AUD 0.2553
Multiples of: 5

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