MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVMJS1D5N04CLTWG


MOSFET 40V 1.55 mOhm 185A Single N-Channel
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ON Semiconductor 2876
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AUD 1.1394
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DMN13M9UCA6-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 2875
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AUD 0.8538
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AOSD26313C


Transistor: N/P-MOSFET; unipolar; -30/30V; -4.4/5.4A; Idm: -23÷34A
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Alpha & Omega 2873
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AUD 0.2988
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YFW3139KT


SOT-523 MOSFETs ROHS
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YFW Electronics 2871
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AUD 0.0381
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2SK3018


SOT-23 MOSFETs ROHS
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High Diode 2871
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AUD 0.0236
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SL2016


SOT-23 MOSFETs ROHS
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SLKORMICRO 2871
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AUD 0.0431
Multiples of: 20

                   
NCE30P15S


MOSFET P Trench 30V 15A 2.2V @ 250uA 12 mΩ @ 15A,10V SOIC-8_150mil RoHS
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NCE Power 2725
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AUD 0.3597
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AP2306GN


MOSFET N Trench 20V 5.3A 1.25V @ 250uA 30 mΩ @ 5.5A,10V SOT-23 RoHS
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APEC 2342
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AUD 0.1525
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ZXM62P03E6TA


MOSFET 30V P-Chnl HDMOS
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Diodes Incorporated 1315
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AUD 0.5385
Multiples of: 1

1.5 A30 V150 mOhmsP - Channel 1 V- 55 C+ 150 C625 mWSmd/SmtSOT - 26 - 6Cut TapeSi1 Channel10 V10.2 nCEnhancement  
AGM404Q


40V 82A 25.5W 4.5m@10V,20A 1.6V@250uA 1PCSNChannel DFN(5x6) MOSFETs ROHS
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AGM-Semi 67
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AUD 0.3627
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